Tools and Techniques

Device package De-capsulation  with laser assitence.

This process combines the laser pre-machining and then the chemical etching of the top/lid of a plastic package to permit access, while leaving the device fully functional.

Different devices and their bondwires have different sensitivities to acids at different temperatures, and so combining acids (or mixtures of acids), different temperatures, hydro-carbon digesters, solvents and electrical biasing with ultrasonic agitation, and laser machining allows the widest variety of Semiconductor (and other) parts to be successfully opened.

This can be for failure analysis, FIB circuit nano-modification, quality assurance checks, or anti-counterfeiting analysis.

48hrs advance notice is required. We can offer both single and dual-acid techniques with fast turnaround and high success rates. Poly-imide, Gel and Silicone coatings can also be removed if required.

Why is it necessary?

While X-ray analysis can show internal failures such as broken /damaged bond wires, the decapsulation of the package is necessary to allow further in depth analysis of a failure or to gain access to the circuit for e.g. Fib Circuit edit or Emission Microscopy

NanoScope offers a decapsuation service using wet (acid) decap, a laser ablation method or a combination of both, thus we are able to open devices with Gold, Aluminium  or Copper bond wires safely.

NanoScope is unique in our IC Nano-Surgery offering.

When we consult on an IC nano-surgery project we will review your IC design by using our GDSII file,  then review your process (from the foundry) and calculate both the time needed, and the risks, BEFORE starting your modification work.

This allows you to understand the YIELD of the fix, and the COST of the fix, before committing to the project.

Managing the design tape out process and the financial implications of them in the context of customer demand and time lines is a complex process that can directly affect the future of a Fabless IC design company.

Having Nano-Scope consulting allows you to plan and risk mange this process effectively.

Definition – A GDSII design file is the file format used by the IC design tool which is portable and allows the design to be viewed and assessed for modification.It is normally accompanied by a process Layer Stack – to allow your FIB Nano-Surgeon to develop and node access strategy with high yields.

At NanoScope we usually request a GDSII file in order to assess circuit edit requirements by displaying in CAD form all the layers of a device, specifically including any ‘dummy’ metal filler patterns, thus giving vital information on accessibility, yield and cost.

Die bonding and Re-bonding

This application permits the localised modification of the INTERNAL wire-bonding to an IC device – and it’s re-sealing  so that it may be used directly on an applications board immediately.

The proven yield of this process can be 95% plus.

This requires:

The PARTIAL decapsulation of a plastic part ot remove the encapsulant around the target bondwires.

Then the bondwires have to be removed

Then NEW bondwires attached in the new configuration

The devices is the inspected by SEM, and any bondwires that are touching are reformed by nano-manipulator.

Then the package is re-sealed using a high quality epoxy and cured using Ultraviolet light.

NanoScope offers die bonding modification on small quantities of fabricated plastic IC components (up to 1000 parts)

The direct ion beam modification of a fabricated IC for the purposes of correcting faulty functionality or providing access to signal nodes for active electrical debugging.
Instructions for the changes to be made can be provided in several forms including plots, GDSII files, simple co-ordinates and a description of what you would like to have.
Most fixes can be turned around in 1 or 2 days depending on the service selected and returned to you by express courier so the working devices are on your desk the next day.
Complex or stacked faults may require more than 1 iteration to get a fully working device.
NanoScope specialises in difficult modifications on advanced processes, and particularly in the use of new techniques required to successfully work with new and challenging materials (like copper).

FIB Circuit Edit 21.10.22

Eag.com

Focused Ion Beam, or FIB circuit edit, services allow the customer to cut traces or add metal connections within a chip. Our services include sample preparation, sample analysis, fault isolation and actual circuit modifications. These circuit edits could support basic electrical design characterization or verification of redesign parameters. Our full range of debug tools enables you to solve even the most vexing logic failures and other anomalies.

FIB circuit edit employs a finely focused Ga+ ion beam to image, etch and deposit materials on an integrated circuit. The beam’s 4-5 nm resolution allows for extremely precise edits to be made. The FIB is coupled to a navigation system (Knights/Camelot/Lavis) providing a method to find subsurface features and ensuring that the right edits are made. The high energy Ga beam can mill through conductors and, by utilizing the appropriate gas chemistries, tungsten, platinum or silicon dioxide can be precisely deposited using the ion beam.

Focused ion beam circuit edits can be done quickly and easily, at a small fraction of the cost of a new lot of wafers in a fab. Circuit edits are often performed once a design flaw has been identified to ensure that the proposed fix will solve the complete problem. With our state-of-the-art equipment and specialized techniques, we can edit circuits at advanced process nodes such as 28 nm, 20 nm and 14 nm with multiple layer metal stacks, as well as back side editing for flip chip packages. Our electronics engineers have many years of experience throughout Silicon Valley and have the knowledge and capability necessary to accommodate the most demanding requests. FIB edits often require rapid turnaround and cannot afford mistakes – our years of experience and focus on customer satisfaction make EAG the smart choice in circuit editing.

ThermoFisher

FIB circuit edit and rapid prototyping

Time to market is a critical factor in the success of semiconductor devices. Manufacturing timelines are long and difficult to manage, so it is important that early production runs provide functional devices. Late discovery of design issues limiting device performance at final test can lead to months of delays in product introduction timelines while new mask sets are created, and new devices are manufactured.

Circuit edit systems provide a solution to test and validate design changes, optimize performance, prototype, and scale functional devices for internal and external customer’s development, validation, and qualification. Circuit edit systems utilize high-resolution focused ion beams (FIBs) and advaced chemistries to perform “nano-surgery” on semi-conductor devices, cutting and creating connections within the device to correct design issues and return functioning products. These working devices keep projects on track without the costs and delays of new mask sets

What is a Circuit Edit?

A circuit edit is when you need to modify an existing ASIC or integrated circuit for whatever reason. This is usually done with the help of an ion beam that is focused onto the chip to modify it as per the request of the designer. Engineers usually opt for this process when their chip fails to behave or operate in a manner that it is supposed to. The circuit edit can be done to either create a new connection between certain components of the circuit or remove a connection that is causing the issue such as creating shorts or simply using up too much power which is having a negative impact on the overall performance of the integrated circuit.

FIB Circuit Editing

FIB circuit editing is a process in which a focused ion beam is used to modify the logic or interconnects on a circuit wafer. FIB circuit edit is usually an extremely time consuming as well as expensive process which is why it is important to pay good attention to when you are redesigning the faulty chip that is being sent for modification through the FIB circuit edit technique.

Anysilicon.com

FIB circuit edit technique can be used to cut off a faulty block on the circuit, it can be used to make new connections if one has shorted, it can be used to cut off a metal track if too much material has been deposited, and, on the contrary, it can also be used to deposit more metal material to develop a connection. The process is an extremely precise one and great care must be taken to ensure that all the details are correctly traced out onto the chip considering that most of the cuts and additions need to be made on a scale of nano and micrometers. The high energy beam can be used to cut off material as well as deposit metals such as tungsten, platinum, and silicon dioxide among others with careful precision and accuracy thanks to expert navigation systems.

With the help of FIB circuit editing, you can modify the logic of the IC, create new probe pads at various locations on the wafer, increase or decrease the total circuit resistance, as well as perform failure analysis if you are interested in figuring out what actually caused your circuit to fail and rendered it unable to perform its desired function in the first place.

 When planning for a focused ion beam circuit edit, you have to make sure as a designer that you not only produce a usable chip, but also protect its integrity. It is very easy to damage the fragile integrated circuit during this process which is why it is recommended to only implement the minimum possible number of edits on a single chip so as to decrease the risk of permanent damage. You do not want to end up with an edited chip that has a completely destroyed structure at the sub micron level.

The re-packaging of a device after it has been de-capsulated and then FIB modified. NanoScope offers a fast and safe glob-topping service for re-sealing of opened and modified packaged devices to protect them during subsequent testing purposes. We offer several proven resealing materials to match your requirements.

Can be used after for die, fix, bondwire protection during handling / socket insertion / re-soldering / solder reflow – using  Globtopping,  High Spec Epoxy fill (UV curing), wax protection or re-lidding.

Package Resealing   14.10.22

Resealing an opened (decapsulated) device can be necessary for handling or transport purposes. Nanoscope offers a resealing service using epoxy based fillers, or where access may still be needed to the device, we can glue down a temporary lid (or even use an inverted [same] device).

Direct electrical connection to buried nodes, by adding FIB deposited metal probe pads onto the surface of the modified device to permit direct mechanical micro-probes to read signals from buried nodes.

Electrical Micro-probing – electrical debug for immediate checks of FIB modifications

Metal probe pad fixing  14.10.22

fibics

Deep sub-micron technologies can pose a problem for conventional electrical probing – obtaining good physical contact between a probe and sub-micron circuitry is a difficult task. To simplify things, a FIB can open probe windows in the appropriate geometries to make positioning electrical probes straightforward, as shown in this optical micrograph….

Anysilicon

With the help of FIB circuit editing, you can modify the logic of the IC, create new probe pads at various locations on the wafer, increase or decrease the total circuit resistance, as well as perform failure analysis if you are interested in figuring out what actually caused your circuit to fail and rendered it unable to perform its desired function in the first place.

When planning for a focused ion beam circuit edit, you have to make sure as a designer that you not only produce a usable chip, but also protect its integrity. It is very easy to damage the fragile integrated circuit during this process which is why it is recommended to only implement the minimum possible number of edits on a single chip so as to decrease the risk of permanent damage. You do not want to end up with an edited chip that has a completely destroyed structure at the sub micron level.

semitracks

With the complexity of modern ICs, this may quickly become an impossible task for failing nodes that are not in very close proximity (electrically) to the failing output. Multiple levels of interconnects may also limit access to many ideal test locations without the use of FIB deposited probe pads. Why Perform Mechanical Probe Signal Tracing?

For Analogue designers concerned about the resistance of adding new connections, or timing issues for long tracks – we offer ultra-low resistance copper deposition – up to millimetres in length if required. Copper deposition connections have resistances of 1.7 micro-ohms per cm.

Copper Track Deposition   14.10.22

In many instances of FIB circuit Edit, traditional FIB based track deposition are short/localised and therefore the metal track resistance is not an issue. In applications where excessively long tracks are required, the resistance issue can be overcome by depositing low-resistance copper tracks.

The DIRECT modification of a PCB track.

Can be done with Gallium FIB or with a PLASMA FIB, depending on track size

Not so far offered by NanoScope Services.

To FIB deposited Probe Pads – connected to buried nodes.

Electrical Micro-Probing using FIB applied Probe Pads 14.10.22

This failure analysis technique allows the electrical investigation into nodes that are not readily accessible by a probe. In such cases, a small metal (usually tungsten) square or X-pad is connected to the buried node through a FIB milled via.

NanoScope offers both “R&D test” Reliability testing services and ISO/JEDEC certified Reliability testing services – this allows product development costs to be minimised (25% less) while being provided to the same rigor as formal production tests – the same calibrated equipment with the same reporting standard – but without certification costs.

Certified or non-certified test  17.10.22

Nanoscope offers both certified and non-certified test reports. When the certified test report is overkill for the product, there is a lower level non-certified report also available.

Using the JEDEC standard protocol for Test Lot pre-conditioning prior to Stress Testing, this procedure requires a 24hr bake period, a 192hr Soak period (Temperature and Humidity) and 3 reflow cycles.

The test lot must be inspected optically and with CSAM (Acoustic Microscopy) prior to, and after the pre-conditioning run, and any changes or failures identified and checked.

Pre-conditioning of Reliability testing  17.10.22

reltech

Preconditioning is performed prior to package level reliability testing to simulate the effects of board assembly on non-hermetic  devices where moisture may have been absorbed during normal storage. The subsequent exposure to high temperature during infra reflow assembly can cause internal damage such as “pop corning” and delamination.

During preconditioning, devices without any electrical bias applied are subjected to  dry baking, temperature and moisture soaking, solder IR reflow simulation, and functional  test before being used for package level reliability testing such as HAST, UHAST, THB, Temperature Cycling and High Temperature storage.

Reltech provides a full capability for Preconditioning as part of a full turn-key solution to package level Qualification testing.

    Performed to JEDEC Standard JESD22-A113

    Typical flow: Dry bake at 150°C for 24 hours > Moisture Soak at 30°C/60%RH (MSL2a) > 3 cycles IR Reflow>CSAM> Functional Test

    Capability for Moisture Sensitivity Level (MSL) 1- 6

    All package styles catered for

caplinq

Preconditioning

Preconditioning tests are being done to determine the workability of semiconductor devices after soldering. They simulate the delivery from the assembly house up to the soldering process at the customer’s plant.

They are based on the JEDEC standard for the preconditioning of non hermetic surface mount devices, prior to reliability testing.

Preconditioning is a series of

    Electrical tests

    Non destructive SAM inspection

    Simulate Temp changes during transportation to the customer

    Simulate the Drying process of the silica gel by dry pack

    Simulate Moisture absorption in the production line

    Simulate Soldering process

    Repeating the first two tests and deciding whether the package is still suitable

MSL level testing requires the same protocol as Pre-conditioning but with different settings defined by the level required.

If a device package pases at level 2 but fails at level 1, it is defined as an MSL2 grade package.

Anysilicon.com

Moisture Sensitivity Level and Popcorn Effect

MSL stands for Moisture Sensitivity Level. It represent the amount of time an IC can be exposed to ambient conditions and still be assembled on a PCB without being damaged.

When the antistatic bag is opened and the ICs are exposed to ambient conditions, the moisture in the air is trapped inside the device. This means that during the PCB assembly process (e.g. reflow) this moisture expands and can damage the device.

The standard specification is: IPC/JEDEC’s J-STD-20

Why is this YOUR problem?

Well, the good news is — it’s not your problem. It’s the PCB fabrication house problem, and they need to specify the required MSL level because they know how long the device will be outside the ESD bag before it’s assembled. This is the floor life of a device.

How is MSL related to Popcorn?

The popcorn effect is when the IC “pops” because the moisture inside the package expands in the reflow process. As a result of this expansion the substrate, the die, or the wirebonds could be damaged. The damage is often invisible and requires X-ray equipment to conduct a proper analysis.

orslabs.com

Moisture Sensitivity Level testing (MSL testing) identifies the classification level of non-hermetic solid state surface mount devices (SMDs) that are sensitive to moisture-induced stress. Moisture sensitivity level testing determines how to properly package, store and handle SMDs to avoid damage during reflow solder attachment.

It is essential to establish a package’s moisture sensitivity level prior to subjecting the part to the preconditioning sequence. This MSL level will dictate storage times for unsealed devices awaiting assembly. MSL testing is usually performed at two levels to determine the level of capability at the highest and lowest temperatures that the SMD is expected to see during its actual assembly.

IPC/JEDEC J-STD-020 is the standard approach in determining a package’s moisture sensitivity level. The reflow temperatures are dependent on package thickness, volume and whether Pb-free or SnPb solder is used.

This Stress test exposes the test lot to elevated temperature and humidity for specified durations, and may also have electrical bias of the device included.

Specific test points in the period may also be specified to check at which point the devices start to fail.

Temperature Humidity and Bias Testing (THB)

Eesemi.com

Temperature, Humidity, Bias (THB) Test 

Temperature, Humidity, Bias (THB) testing is a reliability test designed to accelerate metal corrosion, particularly that of the metallizations on the die surface of the device.

Aside from temperature and humidity which are enough to promote corrosion of metals in the presence of contaminants, bias is applied to the device to provide the potential differences needed to trigger the corrosion process, as well as to drive  mobile contaminants to areas of concentration on the die.

THB testing employs the following stress conditions: 1000 hours at 85 deg C, 85% RH, with bias applied to the device.  The bias applied is usually designed to simulate the bias conditions of the device in its real-life application,  maximizing variations in the potential levels of the different metallization areas on the die as much as possible. 

Surface-mount devices are also preconditioned prior to THB testing. During THB proper, intermediate readpoints at 48H, 96H, 168H, and 500H are often used.  This gives look-ahead reliability data as the THB test progresses.

The main drawback of THB is its long duration, necessitating weeks before useable data are obtained.  Because of this, an alternative test, the HAST, has been developed.  HAST uses more severe stress conditions but can be completed in only 96 hours.  Its shorter duration is an advantage that makes it a more popular stress test in the industr

Aaactl.com

Temperature, Humidity, Bias (THB) Test (aka 85°C/85% RH)

Environmental

Temperature, Humidity, Bias (THB) testing analyzes environmental effects on electronic components such as mechanical, optical (fogging), or hermetic failures, as well as failures due to parameter shifts. When performed at 85°C/85% RH for 1000 hours, it simulates 20 years of moisture ingress on the device under test.

Nts.com

Temperature and humidity testing determines how components, subsystems and complete systems behave in severe environments that involve elevated temperatures and high or fluctuating relative humidity. The tests can be static with constant temperature and humidity, they can involve the cycling of both, they can be temperature-humidity bias tests (where the moisture is used to induce a failure in an electrical device) or some combination of all of these.

Among other things temperature/humidity tests study the effects of climatic changes on electronic components such as failures due to parameter shifts, mechanical failures (due to rapid water or frost formation), optical failures (fogging), water tightness (package) failures, material degradation (epoxy coatings, etc.) and much more. Temperature/humidity tests are a critical component of a complete qualification program. Many electrical components, while inexpensive to purchase, may be expensive to replace. For example, an LCD on an oil exploration device or a marine instrument can cause serious down time costs in a temperature/humidity related failure.  Temperature and humidity combined testing extends to complete systems and finished products that extend beyond electronic components: copiers, computers, automobiles, satellites and even parachutes require temperature/humidity testing.

Wpo-altertechnology.com

Humidity may affect the life expectancy of a component by creating stresses on the part materials and altering its electrical properties in a way that the component reliability is significantly diminished.

Temperature Humidity Test is those performed with the aim of evaluating the properties of materials used in components and the reliability of non-hermetic packaged devices in humid environments.

Temperature & Humidity with Bias Test (THB) employs moisture, temperature, and the devices are normally under bias condition, as accelerating factors. The scope is to activate the humidity penetration through the external materials (encapsulant or seal) or along with the interfaces between the external protective material and the metallic conductors and produce degradations and failures. One of the typical test conditions is known as 85/85, meaning 85°C and 85% of relative humidity, and the duration of the test may vary depending on the used test method.

Once the test is completed electrical measurements are carried out. A device will be considered to have failed the THB test if the parametric limits defined in the acquisition specification are exceeded or if functionality cannot be demonstrated under nominal conditions. Additionally, any appearance of corrosion on the parts under test as well as the appearance of visual defects can be considered sufficient for rejecting the parts.

In accordance with the widely used in space and industry JEDEC Standard No. 22-A101C, the duration of the test is 1000 hours.

Under certain conditions and in accordance with the ECSS-Q-ST-60-13C standard on the use of commercial EEE parts in space applications, this test may be replaced by the Highly Accelerated Stress Test (HAST)  with the test duration reduced to 96 hours.

Similar to THB but with an added pressure component.

HAST  17.10.22

Orslabs.com (US)

The Highly Accelerated Stress Test (HAST) combines high temperature, high humidity, high pressure and time to measure component reliability with or without electrical bias. In a controlled manner, HAST testing accelerates the stresses of the more traditional tests. It essentially functions as a corrosion failure test. Corrosion type failures are accelerated, uncovering flaws such as in packaging seals, materials and joints over a shorter period of time.

Biased Highly Accelerated Stress Tests (BHAST) utilize the same variables (high pressure, high temperature and time) as HAST Tests, but add a voltage bias. The goal of BHAST testing is to accelerate corrosion within the device, thereby speeding up the test period. 

As an accelerated version of the traditional non-condensing THB (temperature humidity bias) test, the HAST test has the advantage of adding high pressure and higher temperatures (up to 149°C) to accelerate temperature and moisture induced failures in roughly one-tenth the time of THB. HAST and BHAST testing is usually run at 130°C/85%RH, but the conditions can also vary.

HAST Highly accelerated stress testing device

The HAST accelerated stress test is similar to the THB test in that failures are caused by the same mechanism. The resulting failures occur at proportional rates and a correlation can be found between activation engines. Electrical devices/components are more reliable and therefore, several thousand hours of THB testing cannot catch the weakness that HAST corrosion failure tests can in a short amount of time.

Reltech

Biased and Unbiased HAST Testing

Considered within the semiconductor industry as the fast and effective alternative to Temperature Humidity Bias testing (THB), Highly-Accelerated Temperature and Humidity Stress Test (HAST) is a critical part of the device package Qualification process and is used to evaluate the reliability of non-hermetic packaged devices in humid environments.  The test employs severe conditions of temperature and humidity created within a pressure vessel, to accelerate moisture penetration through the external protective plastic package encapsulant or seal.

Today’s  low geometry semiconductor devices with higher leakage core current create internal dissipation.  The resultant heating as a result of power dissipation tends to drive moisture away from the die and thereby hinders moisture-related failure mechanisms.

As per JEDEC JESD22-A110D, if DUT dissipation exceeds 200mW – Tj should be calculated. If Tj >10°C above chamber ambient then – cycled bias should be applied. Cycled bias allows moisture collection on the die during the off periods. Cycling the DUT bias with a 50% duty cycle is optimal for most plastic encapsulated devcies.

Many devices can be set into a RESET or “Sleep” mode in order to reduce DUT dissipation. This often requires dynamic signals applied to the DUT. These signals are provided by incorporating the use of dynamic driver cards.

    Performed according to JEDEC standard JESD22-A110 (Biased HAST) and JESDA118 (Unbiased HAST)

    Typical Conditions: 130°C/85%RH/33.3 psia and 110°C/85%RH.17.7 psia

    Duration: 96 or 264 hours

    Power cycled Biased HAST testing performed for higher power devices

    Typical lots sizes 3 x 25 units

    Reltech has over 25 years experience in HAST testing and the design and manufacture of Biased HAST DUT boards.

    Application specific PCB manufacturing techniques are employed to withstand the harsh environment

    Careful DUT socket type selection is critical

    Real time System and DUT monitoring and event logging.

    HAST systems available with up to 116 electrical I/0 connections

Anysilicon

Understanding Highly Accelerated Stress Test (HAST) in IC Qualification

The highly accelerated stress test (HAST) involves the effects of humidity and temperature on an IC or ASIC. The HAST is designed to test the package of the ASIC under extreme humidity and temperature conditions. Devices that pass such tests will be able to withstand the normal rigors of temperature and humidity in most environments.

The HAST is sometimes called the pressure-cooker test because it simulates the conditions found inside a typical household pressure cooker. By increasing the amount of water vapor pressure inside a test chamber while also increasing the temperature, this provides an excellent test of the inherent strength, design, and protection of the electronic components inside. The testing involves increasing the pressure which helps to force water vapor inside the device.

Effects of HAST

Compared to the former standard of high-temperature/high-humidity, the HAST will cause more damage to the components due to how the moisture helps accelerate the corrosive effects of the water vapor. There will also be more damage to the insulation as well, causing fast deterioration, especially in devices that are not up to the HAST standards.

This type of test is mostly done on components that are plastic-sealed, followed by an evaluation of the results. For the most part, the temperatures that are used reach at least 212 degrees F or that of boiling water. This provides for a full state of water vapor to be present in the air and pressurized for maximum effect.

HAST test is performed based on JEDEC standard JESD22-A110 (Biased HAST) and JESDA118 (Unbiased HAST). With conditions: 130°C/85%RH/33.3 psia and 110°C/85%RH.17.7 psia. Test duration is 96 or 264 hours.

The same as HAST but without the electrical bias

HAST  17.10.22

Highly-Accelerated Temperature and Humidity Stress Test (HAST) is considered within the semiconductor industry as the fast and effective alternative to Temperature Humidity Bias testing (THB). Also known as the Pressure Cooker Test, HAST involves increasing the pressure inside a test chamber thus forcing water vapour into an ASIC package to test the package under extreme humidity and temperature conditions. By also accelerating the corrosive effect of the water vapour, this will cause damage to those packages that are below the JEDEC standard.

HAST is therefore a critical part of the device package qualification process and is used to evaluate the reliability of non-hermetic packaged devices in humid environments.  (reltech)

This could be a :-
– Thin film coating.
– Specific IC structure or failure.
– Particle or feature (like a grain boundary or an inclusion).
– On the surface or buried within the sample.

Cross sections can be placed with lateral accuracies as high as 100nm.

Reflow Testing (Solder/solder paste)  17.10.22

aimsolder.com (Canada)

Solder Joint Analysis

Nothing is as costly to an electronics manufacturer as a field-failure. Our solder safety testing services, including solder joint analysis and PCB testing, can help prevent these failures.

Due to testing constraints, electronics assembly professionals often have unresolved questions regarding the integrity of post-assembled parts and products. AIM’s Reliability Analysis Program provides analytical services such as solder joint testing and cleanliness analysis to ensure the integrity and reliability of these parts and assembled products before a failure occurs.

By cross-sectioning PCBs and analyzing their solder joints, AIM has the capability to provide the assurance that these solder joints are acceptable and offer advice on how to improve the quality of less-than-acceptable solder joints.

AIM’s complete organic laboratory has the ability to test PCBs for potentially harmful substances and interactions. AIM Solder customers with concerns about the reactions of the various materials of a PCB with residues, salts, oils, etc. are invited to submit materials to AIM to be tested for compatibility, safety, and durability. Once reviewed, our technical department will offer recommendations in order to minimize the possibility that a product will experience a failure during its lifecycle.

italabs

Our Solder Alloy Evaluation & Testing Service might be able to help and your business.

How do you ensure you make the right choice of alternative solder alloy?

If you have a good process with good yields and a reliable product, why would you need to change?

If you’re exempt from RoHS, you might not need to change.

However, maybe by changing you might:

    Lower solder cost

    Reduce energy bills

    Increase your choice of components

    Achieve greater reliability

    Improve drop shock resistance

    Create an opportunity to redesign your product

    Respond to pressure from outside sources

Solder Alloy Evaluation & Testing ServiceIt pays to get advice when choosing a new solder. Most companies talk with their solder suppliers or their subcontractors. If you’re looking for an independent opinion, supported by test-based evidence, then the experts at ITA Labs have the expertise and facilities to help you.

You need to ensure suitability through representative testing. Thermal cycling is generally carried out, but it must represent the environment that your product is used in, but accelerated.

After cycling, the product will need to be examined for evidence of damage to the joints using Optical microscopy & Cross-sectional analysis. You might carry out Mechanical testing, or Dye & Pry as well.

You will also need to think about the solderability and whether it will work with your present flux/components. A new alloy may require a different flux which could require Contamination testing.

Btu.com (US)

What is reflow soldering?

Reflow soldering is a process whereby electronic components are connected, both electrically and mechanically, to a printed circuit board (PCB). The process begins by applying solder paste to the PCB in a specific pattern using a purpose-built stencil printer. The paste consists of a metal alloy suspended in mixture of solvents and other materials. The board is then heated by use of a reflow oven according to the specification for the solder paste being used, including heating/cooling ramp rates, time above liquidus and peak temperature (max/min).

Reflow ovens come in many lengths and varying numbers of zones allowing for more throughput (boards/min) depending on production needs. The quality of a reflow oven is generally measured by the thermal uniformity and repeatability. The thermal uniformity is measured by the “deltaT” which is the difference between the hottest and coolest thermocouple (TC) as measured on a test board processed through the reflow oven. Process with the lowest deltaT are superior to those with higher deltaTs – as this allows all components to stay within process specifications throughout the entire process and with stand normal process variations. Process repeatability is also key to a good reflow soldering process. Repeatability can be evaluated in terms of boards that are processed within one reflow oven or SMT line, or within the context of an entire factory or even within the context of global manufacturing output.

Autoclave testing (100%rh with elevated temp and pressure)  17.10.22

The Autoclave testing of packaged devices to a sustained 100% humidity with elevated temperature and pressure. This test can be twinned with a CSAM investigation to determine if moisture has ingressed into the package. Autoclave testing may be Biased or Unbiased.

Direct measurments of 3D features and processes with traceable reference to recognised calibration standards.

Thermal Shock Testing 17.10.22

Tuvsud.com

What is Thermal shock testing and why is it important?

Thermal shock testing reduces the risk of product failure in the field by replicating a quick transition between two extreme temperatures; for example -50°C to 71°C in less than one minute. The test specification defines the applied temperatures and test conditions, this type of testing is commonly cyclic and its duration is defined by a set number of transitions (cycles) between the two temperatures.

Why choose TÜV SÜD for thermal shock testing?

TÜV SÜD has the capability to test at temperatures between -65°C and +190°C. At TÜV SÜD we use a two chamber method to achieve fast and efficient transition time.

We can provide manufacturers with the following testing services:

    Cyclic temperature testing

    Transfer times less than 15 seconds achievable

We provide testing for thermal shock to many specifications including the following common standards:

    DEF-STAN 00-35

    IEC 60068

    MIL-STD 810

Smithers.com (US)

Thermal Shock Testing

Wide, rapid swings in temperature can adversely affect the performance and life cycle durability of various products. Thermal shock testing is commonly used to simulate these conditions and ensure proper material and final product performance.

From consumer electronics to electronic components for industrial applications to underhood components, thermal shock testing has become a life cycle durability testing requirement for many OEMs and end users. A thermal shock  chamber exposes parts to rapid cycling of hot and cold temperatures.  The breaking point in this process is called tensile strength.  The thermal shock process determines that breaking point and leads development engineers down a path of designing for greater robustness.

Various industry standards have been increasing the requirements for thermal shock due to a number of factors:

    Miniaturization of parts and equipment make them susceptible to heat

    Production processes such as reflow soldering inflict extreme heat

    Demands for higher product precision cause greater heat stress during production

    Far more electronic component use over mechanical, specifically in the automotive industry

    Efforts within the automotive industry to make lighter yet stronger parts throughout the entire vehicle require the need to know how they will handle extreme temperature changes

    Extreme/rapid temperature changes within engine compartments on components under the hood

Smithers’ experts can work with your development team to understand the requirements for your product or material. They can then recommend standard test protocols or develop a custom testing program to ensure that you will receive the data needed to make critical product development decisions.

    Internal dimensions: 38 inches wide, 26.4 inches deep, 18 inches tall

    Temperature range:

        Hot zone: Ambient+50°C to 200°C

        Cold zone: -65° to 0°C

Common Test Protocols

MIL STD 202: Test Method Standard – Electronic and Electrical Component Parts

MIL STD 883: Test Method Standard – Microcircuits

SAE J2657: Tire Pressure Monitoring Systems for Light Duty Highway Vehicles

Industry ISO Standard Reporting

Iso.org

ISO International Standards support sustainable industrialization through internationally agreed specifications that meet quality, safety and sustainability requirements.

Covering virtually all industries, they give confidence to investors and consumers by creating an environment in which products and services can flourish. What’s more, ISO standards provide a universal language, thus breaking down technical barriers to international trade. This is particularly important for developing countries as it allows them to compete more easily in the global marketplace.

ISO also has standards that facilitate business practices and relationships. These include ISO 44001, Collaborative business relationship management systems – Requirements and framework, which provides a common platform to maximize the benefits of collaborative working and assist companies in establishing healthy business relationships, both within and between organizations.

Standards are also important tools in building safe and resilient infrastructures. For example, ISO has over a thousand standards for the construction industry that provide internationally agreed guidelines and specifications on everything from the type and status of the soil these buildings stand on to the roof. These include not only minimum safety and performance levels, but a series of test methods for resilience as well.

To JEDEC standard?

Optical inspection of packaged parts

Italabs

Our Optical Microscopy Inspection suite at ITA Labs offers a combination of stereo and polarised light optical microscopy to cater for a range of magnifications. As well as being often used as a quick prelude to electron microscopy, the optical microscopes compliment the microsectioning process, enabling accurate sampling prior to encapsulation and also allowing progress to be closely monitored.

Optical Microscopy InspectionAs a technique in its own right, optical microscopy is used as the inspection tool for checking markings on silicon chip dies in electronic component counterfeiting investigations and also for the analysis and measurement of plating thickness and coating thickness in microsections.

It can also identify defects and confirm the soldering on a PCB conforms to the IPC-A-610 standard when developing a new board or implementing a new process.

lpdlabservices

Optical microscopy allows small features of a sample to be analysed in detail. LPD Lab Services routinely uses its range of microscopes for initial examination and characterisation to plan the next steps for work or to confirm customer’s observations prior to proceeding to more detailed investigations by other laboratory techniques such as SEM/EDX or reverse engineering.

The laboratory’s microscopes and experienced microscopists can acquire images in transmission or reflection with a range of lighting conditions designed to highlight the areas of interest.  High depth of field microscopes can be used to inspect the assembly of different sub-components and higher magnification microscopes can be used for polished cross-sections for example where the sample is flat.

Looking for cracks and voids

CSAM

Lab-services.com

Confocal Scanning Acoustic Microscopy (CSAM) is a rapid and reliable NDT. It uses ultrasonic waves to detect changes in acoustic impedance within the testing samples. With reflective as well as through-scan capabilities, our CSAM is able to examine various materials, different sizes and particularly on samples with interior voids or delamination.

Advancedmicroanalytical.com

Scanning Acoustic Microscopy (CSAM) is a non-invasive technique used to non-destructively inspect for construction details, defects or the integrity of an optically opaque solid sample, component, material or structure.  The Acoustic Microscope can be utilized as an aid in failure analysis, research & development, QC, reliability or process control by identifying sub surface delamination, voids, cracks, bond lines or seal issues in various materials. Typical applications are microelectronics, encapsulated devices, bonded wafers and materials, lid seal and more. At Advanced MicroAnalytical we use CSAM in concert with other techniques and instrumentation to give us diagnostic flexibility and for use with project analysis on samples where minimally invasive or nondestructive techniques are required.

Muanalysis.com

Scanning Acoustic Microscopy (SAM) is a quick, non-destructive analysis technique. SAM uses ultrasound waves to detect changes in acoustic impedances in integrated circuits (ICs) and other similar materials. Pulses of different frequencies are used to penetrate various materials to examine sample interiors for voids or delamination. MuAnalysis performs C-mode SAM (or C-SAM), with both reflective and through-scan capabilities.

Assessing package reliability often requires the ability to study package interiors without destroying the packages. Scanning Acoustic Microscopy allows the user to examine different interfaces and determine the mechanical integrity of the assembly, all by non-destructive means.

Scanning acoustic microscopy probes with ultrasound pulses at various frequencies. At interfaces between materials having different acoustic impedances, an acoustic reflection (an echo) occurs. The intensity and polarity of this echo is recorded and presented as a colour map of the sample.

MuAnalysis uses a wide range of transducer frequencies, providing the flexibility to look at various materials and sites. Low frequency transducers, such as 10, 15, 20 and 30 MHz, allow for higher penetration through materials but lower spatial resolution. Higher frequency transducers, such as 100 and 230 MHz, give higher resolution and are used once an area of concern has been isolated. Reflective microscopy looks for voiding at a certain interface. Through-scan microscopy detects voids at any depth in the device.

At MuAnalysis, on-site physical and failure analysis supports further investigation if required.

X-Ray

icfailureanalysis

X ray inspection systems are key tools for failure analysis, quality control, and yield enhancement of Integrated Circuits (ICs), active & passive components, and Printed Circuit Boards (PCBs). In many cases, IC X-Ray Services (2D and 3D) provides the only non-destructive techniques to inspect optically hidden components and solder joints such as BGA, POP, QFN, flip chips, through holes, TSVs, micro-bumps, copper pillars, etc. There have been significant improvements in the X-ray inspection capabilities (both 2D and 3D) in the last several years.

Request a Qoute for IC X-Ray Inspection

While contrast imaging is a very powerful and widely used technique, there is significantly more information present within the X ray beam, which, until now, has not been exploited in electronics inspection. Instead of simply measuring the total absorption of the X ray beam, a physical structure known as a Multi Absorption Plate (MAP) can be placed in the beam path. This, coupled with machine learning algorithms, enables material type and thickness information to be acquired alongside the standard grey-scale image.      

SEM Failure Analysis

IC Failure Analysis Lab uses the state-of-the-art 2D and 3D X-Ray machines to meet today’s non-destructive inspection of electronic components and provide clear and high quality digital images of the samples with fast turn around and lower costs. You can request a free quote for IC X-Ray Services right now.

With Optical inspection, FEG SEM and EDS ID’s and Mapping for competitive review / IP infringement checks.

Requires precision mechanical polishing.

Broad Ion Beam polishing (Perfect Edge) to remove minor polishing artifact is also available.

Mechanical Cross Sectioning

Covalentmetrology.com

Mechanical Cross-Section Analysis

Through-Pin solder joint showing hole-fill is <75%, which is a defect per IPC-A-610G, section 7.3.5.1.

Mechanical cross section analysis enables one to expose buried features on a sample in a controlled fashion. It is regularly used in IPC compliance testing, to assay critical dimensions, or to identify miscellaneous structural defects or abnormalities such as: cracks, bridging, delamination, deformations, and more.

Covalent Metrology’s technical staff have over 30 years of experience in preparation and measurement of sample cross sections. In addition, our team is certified to conduct IPC qualified cross-sectional procedures for PCB failure analysis and quality control.

Strengths

    High-resolution structural analysis for internal features of components, assemblies, and substrates

    Can be combined with EDS / EDX for elemental mapping

    Robust documentation and compliance standards available

Limitations

    Destructive analysis

    Multiple cross-sectional samples are required to evaluate all pins on most electronic components / PCBs

    Technique is highly manual and extensive expertise is required to properly prepare samples. Improperly prepared samples can produce misleading artifacts

Lab-services.com

Cross-section preparation is one of the most effective ways in examining how a material is laminated or component is assembled and produced. From cross section, we can determine the different layers’ interaction. And from close observations layer after layer we can easily zoom into the mechanism that caused a failure.

Good cross-section preparation will not disturb, smear or alter the specimen from pointing to the correct conclusion.  Therefore the skill and experience of the person preparing the sample is crucial.  Our Labs possessed the expertise in Cross-section preparation because we know that samples from customers can be scarce. Some samples photos below to show the steps in polishing.

    Determination of coating thickness or coating continuity.

    Inspection for settling out of filler materials in painted coatings.

    Metallographic sample preparation inspecting for the presence of different metallurgical phases, defects or porosity.

    Measurement of the extent of inter-layer mixing and diffusion in laminated or coated structures.

    Physical failure analysis looking for cracks or evidence of failure initiation sites for mechanisms such as fatigue, corrosion, stress corrosion cracking, poor cleaning practices, buried interfaces, weak boundary layers, etc.

    Component assembly inspection and reverse engineering.

icfailureanalysis.com

cross section analysis or micro sectioning analysis is a destructive failure analysis technique to expose a plane of interest in a specimen such as a die cross-section, connector cross-section, solder ball cross-section, plated materials cross-section, capacitor cross-section, resistor cross-section, metal cross-section, PCB Cross Section analysis, or any other device for further analysis or inspection.

Sample preparation consists of cleaning, mounting, and encapsulation of the specimen in polyester or epoxy resin. These steps provide support, stability, and protection.  Sometimes, a sample is sawed to reduce its size prior to encapsulation. This is usually done to fit the specimen perfectly into the mold, as well as to reduce the grinding needed during actual sectioning.

Fractiontechnologies.com (Singapore)

Mechanical Cross section

Mechanical Cross section  is one of five main operations in the preparation of metallographic specimens. It involves removing a conveniently shaped, representative specimen from a larger sample. Mounting, grinding, polishing, and etching are the remaining operations.

Examinations of metal structures are usually done on parts that have been removed from a bulk specimen. Only a single section surface is often prepared, and the structural features exposed on this surface can be studied using a variety of techniques like optical examination, scanning electron microscope.

17.10.22 (blank)

Broad Ion Beam Polishing of Mechanical Sections 18.10.22

In a Broad Ion-Beam (BIB) instrument, a beam of heavy ions, typically Ar, is used to bombard a target material, thereby sputtering atoms from the target surface. As the name of the technique implies, the milling process typically takes place over a wide area, several hundred microns up to 1-2 millimeters in diameter.

BIB instruments have been extensively used in materials research for a few decades. The major applications within CMAL have been to produce high quality TEM samples or cross sectional cuts of materials normal to the sample surface to study, e.g. interfaces and bulk matter. The former approach is often referred to as ion polishing. Since the ion polishing process is rather slow it is important that the samples are pre-thinned by e.g. mechanical grinding and polishing or chemical polishing. (chalmers.se)

FIB section of a section – damage free imaging  18.10.22

A mechanical section will allow analysis of the e.g. packaged device but due to the level of preparation damage may lack the finer detail needed for small scale site specific investigation. Placing a FIB section into an already prepared section can allow for further imaging of a particular site – what we call ‘a section of a section’.

CSAM can be an effective non-destructive analysis (NDA) technique for checking your production process for problems with ADHESION, DIE ATTACH, UNDER-FILL VOIDING, Cracks, Braising Voids/quality.

CSAM  17.10.22

Lab-services.com

Confocal Scanning Acoustic Microscopy (CSAM) is a rapid and reliable NDT. It uses ultrasonic waves to detect changes in acoustic impedance within the testing samples. With reflective as well as through-scan capabilities, our CSAM is able to examine various materials, different sizes and particularly on samples with interior voids or delamination.

Advancedmicroanalytical.com

Scanning Acoustic Microscopy (CSAM) is a non-invasive technique used to non-destructively inspect for construction details, defects or the integrity of an optically opaque solid sample, component, material or structure.  The Acoustic Microscope can be utilized as an aid in failure analysis, research & development, QC, reliability or process control by identifying sub surface delamination, voids, cracks, bond lines or seal issues in various materials. Typical applications are microelectronics, encapsulated devices, bonded wafers and materials, lid seal and more. At Advanced MicroAnalytical we use CSAM in concert with other techniques and instrumentation to give us diagnostic flexibility and for use with project analysis on samples where minimally invasive or nondestructive techniques are required.

Muanalysis.com

Scanning Acoustic Microscopy (SAM) is a quick, non-destructive analysis technique. SAM uses ultrasound waves to detect changes in acoustic impedances in integrated circuits (ICs) and other similar materials. Pulses of different frequencies are used to penetrate various materials to examine sample interiors for voids or delamination. MuAnalysis performs C-mode SAM (or C-SAM), with both reflective and through-scan capabilities.

Assessing package reliability often requires the ability to study package interiors without destroying the packages. Scanning Acoustic Microscopy allows the user to examine different interfaces and determine the mechanical integrity of the assembly, all by non-destructive means.

Scanning acoustic microscopy probes with ultrasound pulses at various frequencies. At interfaces between materials having different acoustic impedances, an acoustic reflection (an echo) occurs. The intensity and polarity of this echo is recorded and presented as a colour map of the sample.

MuAnalysis uses a wide range of transducer frequencies, providing the flexibility to look at various materials and sites. Low frequency transducers, such as 10, 15, 20 and 30 MHz, allow for higher penetration through materials but lower spatial resolution. Higher frequency transducers, such as 100 and 230 MHz, give higher resolution and are used once an area of concern has been isolated. Reflective microscopy looks for voiding at a certain interface. Through-scan microscopy detects voids at any depth in the device.

At MuAnalysis, on-site physical and failure analysis supports further investigation if required.

MSL level testing requires the same protocol as Pre-conditioning but with different settings defined by the level required.

If a device package pases at level 2 but fails at level 1, it is defined as an MSL2 grade package.

Contamination investigations 18.10.22

eag.com

Unexpected and unaddressed contamination can have a dramatic impact on manufacturing processes, therefore it is critical to understand and control it quickly. EAG scientists are experts at applying materials characterization techniques to search for and identify contaminants, determine their source and measure the effectiveness of contaminant removal/cleaning.

Choosing the appropriate technique or analytical approach depends upon the circumstances of the contamination event(s), the nature of the contaminant(s) and the goal of the analysis.

• Is the contaminant expected to be organic or inorganic?
• Is a large amount of contamination expected or only a little?
• Is the contamination expected to be widespread, localized, or particulate?
• Is it expected to be on the surface, in a specific layer, at an interface, or in the bulk of the material?
• Are trace levels important or does the presence of the contaminant only matter above a certain level?
• Is there a time or location dependent aspect regarding how the contaminant appears?

Often, a strategic, technical, multi-disciplinary approach is required to fully identify an unknown contaminant. The use of a comparison study between a control and suspect sample may also be helpful (or required). The specific technical approach is dependent on the sample matrix and the suspected level of contamination. Once identification is complete, EAG scientists can further quantify the contaminant in the sample matrix by other methods or through quantification of existing data.

Typical contamination testing and identification projects have involved off-odor/flavor investigations, off-color problems, or foreign particles in a product. Some sources of contaminants have been from the environment, from improper storage of the product, or due to poor quality raw materials. We work closely with our clients to trace the source of contamination and develop a realistic corrective action program.

Listed below are many different types of contamination and potential techniques of interest to address them. The type of contamination can very much determine whether the technique used is successful. In some cases a combination of techniques may be needed, particularly if little is known about the contamination or if it is a mixture of components.

• Particles: SEM, EDS, Auger, FTIR, Raman, TOF-SIMS
• Residues: Auger, FTIR, XPS, TOF-SIMS
• Discoloration/stains: XPS, Auger, TOF-SIMS, FTIR
• Haze: SEM, AFM, OP, TOF-SIMS, XPS
• Layer: SEM-EDS, XPS, Auger, SIMS, TOF-SIMS
• Bulk: XPS, ICP-OES, ICP-MS, GDMS, XRF, FTIR
• Odor: GCMS

Ultra Fine surface morphology investigations for III/V and II/VI layer growth experiments/ investigations – or for Nano-Particle Distribution / Growth experiments (like amorphous diamond)

Atomic Force Microscopy (AFM)

Nanoscience.com

Atomic Force Microscopy

The atomic force microscope (AFM) was developed to overcome a basic drawback with STM – it can only image conducting or semiconducting surfaces. The AFM has the advantage of imaging almost any type of surface, including polymers, ceramics, composites, glass, and biological samples.

Binnig, Quate, and Gerber invented the AFM in 1985. Their original AFM consisted of a diamond shard attached to a strip of gold foil. The diamond tip contacted the surface directly, with the interatomic van der Waals forces providing the interaction mechanism. Detection of the cantilever’s vertical movement was done with a second tip – an STM placed above the cantilever.

How an Atomic Force Microscope works

Analogous to how an Scanning Tunneling Microscope works, a sharp tip is raster-scanned over a surface using a feedback loop to adjust parameters needed to image a surface. Unlike Scanning Tunneling Microscopes, the Atomic Force Microscope does not need a conducting sample. Instead of using the quantum mechanical effect of tunneling, atomic forces are used to map the tip-sample interaction.

Often referred to as scanning probe microscopy (SPM), there are Atomic Force Microscopy techniques for almost any measurable force interaction – van der Waals, electrical, magnetic, thermal. For some of the more specialized techniques, modified tips and software adjustments are needed.

In addition to Angstrom-level positioning and feedback loop control, there are 2 components typically included in Atomic Force Microscopy: Deflection and Force Measurement.

lab-services.com

Description

Atomic force microscopy (AFM)  is a very high-resolution, high-sensitive type of scanning probe microscopy capable of quantifying surface roughness down to angstrom-scale. It can performs qualitative mapping of physical properties, like electric fields, adhesion layers, dopant distribution, conductivity region, Thinfilm layer etc.

• Three-dimensional surface topographic imaging
• surface roughness, grain size, step height, and pitch
• Imaging of other sample characteristics, likes magnetic field, capacitance, friction, and phase.

Measurelabs.com (Finland) has price list on site

Atomic force microscopy

Atomic force microscopy (AFM) is used to analyze surface topography of smooth surfaces. AFM can produce high resolution images and roughness analysis.

Impact-solutions.co.uk

surface analysis of plastics via atomic force microscopy

Atomic Force Microscopy (AFM) is the most powerful microscopic technique, which offer three dimensional images of the scanned material with exceptional detail and resolutions. Unlike the other microscopy techniques AFM is does not use light or electrons to see the surface, it “feels” it instead with a very fine and sharp cantilever and a mounted tip. The tip is scanning the surface in two directions and gives the profile of the scanned surface in sub-nanometer detail.

In the plastics industry, AFM is often used to investigate the phase separation between the polymer blends within the material, the dispersion of additives, particles, the crystallization rate, the friction properties, the surface roughness etc.

At impact we collaborate with Prof. Vasileios Koutsos group at the University of Edinburgh in order to use this technique for several internal and external polymer development projects.

Epitaxial layer growth Qualification for Silicon On Insulator or Epi Silicon for Power Electronics, or Laser Mirrors and Quantum Well metrology. NanoScope have extensive experience working with a wide range of Compound Semiconductors that often have ‘non-trivial’ properties and challenges for sample preparation and Analysis. These include Gallium Arsenide (GaAs), Indium Phosphide (InP), Silicon Carbide (SiC), Diamond, Polymers, Glass, Quartz, Silicon

18.10.22 (nothing added)

With metrology to referenced standards

Qwik Qual – next day FAB process qualification 18.10.22

As part of Nanoscope’s FAB support we are pleased to offer what we call ‘QwikQual’. A service which will give a next day result on qualifying a process that is e.g. causing a delay in FAB production.

FIB-SEM Sectioning and Imaging 

Blue-scientific

FEG-SEM (Field Emission Gun – Scanning Electron Microscope) provides the very highest resolution imaging compared to regular SEM. It guarantees high brightness, crisp images and stable beam current.

Usually FEG-SEMs are large floor-standing systems, but the same high resolution technology is now available in a much more convenient desktop instrument: the Thermo Scientific Phenom Pharos G2.

Very Highest Resolution

FEG gives the very highest resolution, with high brightness, crisp images and a stable beam current. The Phenom Pharos G2 offers a resolution of 2.0 nm at 20 kV. This shows the shape of nanoparticles, imperfections in coatings and other features that would be missed by other SEMs, including those with a traditional tungsten source.

Le.ac.uk

Field Emission Gun Scanning Electron Microscope (FEGSEM)

Scanning electron microscopy (SEM) is a microscopy technique in which a beam of electrons are directed at a specimen of interest. The electron beam interacts with the specimen generating a number of secondary emissions. An SEM provides the ability for high resolution surface imaging with a long depth of field images to be acquired. All our FEGSEM’s have auxiliary Energy Dispersive Spectroscopy (EDS) detectors and Electron backscatter diffraction (EBSD) cameras.

A FEGSEM is an indispensable analytical tool for research and solving industrial problems where optical microscopes will not provide the required resolution. The AMC has recently invested in two new FEGSEM’s to increase the capacity within the centre, this is in addition to the combined FIB/FEGSEM (Dualbeam) system which is also located within the centre.

Samples can be viewed coated or uncoated. Maximum sample size 150mm by 150mm.

Sciencedirect.com

Energy Dispersive Spectroscopy

The energy dispersive spectroscopy (EDS) technique is mostly used for qualitative analysis of materials but is capable of providing semi-quantitative results as well. Typically, SEM instrumentation is equipped with an EDS system to allow for the chemical analysis of features being observed in SEM monitor. Simultaneous SEM and EDS analysis is advantageous in failure analysis cases where spot analysis becomes extremely crucial in arriving at a valid conclusion. Signals produced in an SEM/EDS system includes secondary and backscattered electrons that are used in image forming for morphological analysis as well as X-rays that are used for identification and quantification of chemicals present at detectable concentrations. The detection limit in EDS depends on sample surface conditions, smoother the surface the lower the detection limit. EDS can detect major and minor elements with concentrations higher than 10 wt% (major) and minor concentrations (concentrations between 1 and 10 wt%). The detection limit for bulk materials is 0.1 wt% therefore EDS cannot detect trace elements (concentrations below 0.01 wt%)

Thermofisher.com

Energy-dispersive X-ray spectroscopy (EDS, also abbreviated EDX or XEDS) is an analytical technique that enables the chemical characterization/elemental analysis of materials. A sample excited by an energy source (such as the electron beam of an electron microscope) dissipates some of the absorbed energy by ejecting a core-shell electron. A higher energy outer-shell electron then proceeds to fill its place, releasing the difference in energy as an X-ray that has a characteristic spectrum based on its atom of origin. This allows for the compositional analysis of a given sample volume that has been excited by the energy source. The position of the peaks in the spectrum identifies the element, whereas the intensity of the signal corresponds to the concentration of the element.

As previously stated, an electron beam provides sufficient energy to eject core-shell electrons and cause X-ray emission. Compositional information, down to the atomic level, can be obtained with the addition of an EDS detector to an electron microscope. As the electron probe is scanned across the sample, characteristic X-rays are emitted and measured; each recorded EDS spectrum is mapped to a specific position on the sample. The quality of the results depends on the signal strength and the cleanliness of the spectrum. Signal strength relies heavily on a good signal-to-noise ratio, particularly for trace element detection and dose minimization (which allows for faster recording and artifact-free results). Cleanliness will impact the number of spurious peaks seen; this is a consequence of the materials that make up the electron column.

NanoScope offers 3 types of SIMS :

Time of Flight (TOF)

Magnetic Sector SIMS (Static or Dynamic)

FIB Magnetic Sector (small area)

Secondary Ion Mass Spectrometry (SIMS)

Eurofins

Secondary Ion Mass Spectrometry (SIMS)

Secondary Ion Mass Spectrometry (SIMS) detects very low concentrations of dopants and impurities. The technique provides elemental depth profiles over a wide depth range from a few angstroms (Å) to tens of micrometers (µm). The sample surface is sputtered/etched with a beam of primary ions, (usually O2+ or Cs+) while secondary ions formed during the sputtering process are extracted and analyzed using a mass spectrometer (quadrupole, magnetic sector or Time of flight). The secondary ions can range in concentration from matrix levels down to sub-ppm trace levels.

EAG is the industry standard for SIMS analysis, offering the best detection limits, along with accurate concentration and layer structure identification. EAG’s depth and scope of experience and commitment to research and development in the SIMS field is unrivaled. EAG has the largest range of Secondary Ion Mass Spectrometry instruments worldwide (more than 40), staffed by exceptionally qualified scientists. EAG also has the world’s largest reference material library of ion-implanted and bulk-doped standards for accurate SIMS quantification.

Ideal Uses of SIMS

    Dopant and impurity depth profiling

    Composition and impurity measurements of thin films (metals, dielectrics, SiGe, III-V, and II-VI materials)

    Ultra-high depth resolution profiling of shallow implants and ultra-thin films

    Bulk analyses including B, C, O and N in Si

    High-precision matching of process tools such as ion implanters or epitaxial reactors

Springer.link

SIMS, secondary ion mass spectroscopy, is a surface chemical analysis technique for solid materials. As its name indicates, a specimen is bombarded with a primary ion beam and the secondary ions are collected using a detector – a spectrometer. The secondary ions provide information on the elemental, molecular, and isotopic composition of a material’s surface. SIMS is one of the most sensitive techniques for surface analysis.

Infinitalab (US)

Secondary Ion Mass Spectrometry – SIMS Testing Services

Secondary Ion Mass Spectroscopy (SIMS) is a tool for the composition analysis of metals, semiconductors, polymers, biomaterials, minerals, rocks, and ceramics. As the name suggests, SIMS uses a mass spectrometer to analyze secondary ions ejected after primary ions are bombarded on the sample surface. In the laboratory, SIMS can detect almost all elements in the periodic table, from Hydrogen to Uranium, in very low concentrations and with high lateral resolution. Thus, it is useful for dopants, impurities, and trace element analysis.

Static and Dynamic SIMS are two modes differentiated by whether only the top layer of the solid or a depth (from nm to a few tens of micron) is probed. These modes are accomplished by changing the primary ion beam’s dose i.e. a low dose ion beam only knocks out atoms from the top monolayer while a high dose beam goes through several layers. Time-of-flight (ToF-SIMS), quadrupole, and magnetic sector mass spectrometers options are available in combination with modes.

Our well-equipped testing labs perform SIMS analysis for our clients based in the USA and other parts of the world. We at Infinita Lab perform not only routine tests, but also custom tests designed in our laboratory as per the client’s specific requirements.

Secondary Ion Mass Spectrometry – SIMS Testing Services

Secondary Ion Mass Spectroscopy (SIMS) is a tool for the composition analysis of metals, semiconductors, polymers, biomaterials, minerals, rocks, and ceramics. As the name suggests, SIMS uses a mass spectrometer to analyze secondary ions ejected after primary ions are bombarded on the sample surface. In the laboratory, SIMS can detect almost all elements in the periodic table, from Hydrogen to Uranium, in very low concentrations and with high lateral resolution. Thus, it is useful for dopants, impurities, and trace element analysis.

Static and Dynamic SIMS are two modes differentiated by whether only the top layer of the solid or a depth (from nm to a few tens of micron) is probed. These modes are accomplished by changing the primary ion beam’s dose i.e. a low dose ion beam only knocks out atoms from the top monolayer while a high dose beam goes through several layers. Time-of-flight (ToF-SIMS), quadrupole, and magnetic sector mass spectrometers options are available in combination with modes.

Our well-equipped testing labs perform SIMS analysis for our clients based in the USA and other parts of the world. We at Infinita Lab perform not only routine tests, but also custom tests designed in our laboratory as per the client’s specific requirements.

Common Uses of SIMS

    Contamination and impurities distribution in thin-film multilayer stacks

    Depth profile of dopants (B, C, N) concentration in Si

    Molecular species in organic materials

    Isotopes and trace elements in minerals

    Analysis of the defects at the interfaces in atomic layer systems

    Composition analysis for III-V, II-VI, GaN, SiC, Si, GaAs, Diamond, Graphene, Biological, Organic Materials, Minerals, etc.

SIMS Advantages

    The only technique for direct detection of hydrogen and deuterium

    High detection sensitivity approaching ppb, parts per billion

    Covers elements from Hydrogen to Uranium

    High mass resolution (dynamic range) for all materials, conducting or insulating

    High lateral resolution (<50 nm)

Limitations of SIMS

    Quantification is complicated and requires standards

    Chemical bonding information is not provided

    Only materials that can be used under ultra-high vacuum

    Destructive analysis

Through Silicon Vias, FlipChip packaging, Semiconductor Growth stacks, Solder defects etc

Plasma FIB (pFIB) for large structures and PCBs

For sectioning large structures such as PCBs & mounted features  when looking for defects, cracks, voids etc. where traditional techniques such as FIB sections may be unsuitable. Broad Ion Beam (BIB) polishing may also be used to enhance the polished face.

Surface Chemisty

XPS

Wiki

X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique based on the photoelectric effect that can identify the elements that exist within a material (elemental composition) or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to. The technique can be used in line profiling of the elemental composition across the surface, or in depth profiling when paired with ion-beam etching. It is often applied to study chemical processes in the materials in their as-received state or after cleavage, scraping, exposure to heat, reactive gasses or solutions, ultraviolet light, or during ion implantation.

XPS belongs to the family of photoemission spectroscopies in which electron population spectra are obtained by irradiating a material with a beam of X-rays. Chemical states are inferred from the measurement of the kinetic energy and the number of the ejected electrons. XPS requires high vacuum (residual gas pressure p ~ 10−6 Pa) or ultra-high vacuum (p < 10−7 Pa) conditions, although a current area of development is ambient-pressure XPS, in which samples are analyzed at pressures of a few tens of millibar.

When laboratory X-ray sources are used, XPS easily detects all elements except hydrogen and helium. The detection limit is in the parts per thousand range, but parts per million (ppm) are achievable with long collection times and concentration at top surface.

XPS is routinely used to analyze inorganic compounds, metal alloys,[1] semiconductors,[2] polymers, elements, catalysts,[3][4][5][6] glasses, ceramics, paints, papers, inks, woods, plant parts, make-up, teeth, bones, medical implants, bio-materials,[7] coatings,[8] viscous oils, glues, ion-modified materials[9] and many others. Somewhat less routinely XPS is used to analyze the hydrated forms of materials such as hydrogels and biological samples by freezing them in their hydrated state in an ultrapure environment, and allowing multilayers of ice to sublime away prior to analysis.

Phi.com

X-ray Photoelectron Spectroscopy (XPS) also known as Electron Spectroscopy for Chemical Analysis (ESCA) is the most widely used surface analysis technique because it can be applied to a broad range of materials and provides valuable quantitative and chemical state information from the surface of the material being studied. The average depth of analysis for an XPS measurement is approximately 5 nm. PHI XPS instruments provide the ability to obtain spectra with a lateral spatial resolution as small as 7.5 µm. Spatial distribution information can be obtained by scanning the micro focused x-ray beam across the sample surface. Depth distribution information can be obtained by combining XPS measurements with ion milling (sputtering) to characterize thin film structures. The information XPS provides about surface layers or thin film structures is important for many industrial and research applications where surface or thin film composition plays a critical role in performance including: nanomaterials, photovoltaics, catalysis, corrosion, adhesion, electronic devices and packaging, magnetic media, display technology, surface treatments, and thin film coatings used for numerous applications.

XPS is typically accomplished by exciting a samples surface with mono-energetic Al kα x-rays causing photoelectrons to be emitted from the sample surface. An electron energy analyzer is used to measure the energy of the emitted photoelectrons. From the binding energy and intensity of a photoelectron peak, the elemental identity, chemical state, and quantity of a detected element can be determined.

Physical Electronics XPS instruments function in a manner analogous to SEM/EDS instruments that use a finely focused electron beam to create SEM images for sample viewing and point spectra or images for compositional analysis. With the PHI XPS instruments, a finely focused x-ray beam is scanned to create secondary electron images for sample viewing and point spectra or images for compositional analysis. The size of the x-ray beam can be increased to support the efficient analysis of larger samples with homogeneous composition. In contrast to SEM/EDS which has a typical analysis depth of 1-3 µm, XPS is a surface analysis technique with a typical analysis depth of less than 5 nm and is therefore better suited for the compositional analysis of ultra-thin layers and thin microscale sample features.

Trace Element Impurity Measurements on Wafers

Applications of VPD-ICP-MS and TXRF​

• Measurements of Ultra Low Levels of Metallics 

• Mobile Species & Nobel Metals

• Oxide , PSG,  BPSG,  and  Nitrides 

• Partial or Full Wafer Scans

• Environmental Control 

• Process Monitoring

19.10.22 (blank)

X-Ray

icfailureanalysis

X ray inspection systems are key tools for failure analysis, quality control, and yield enhancement of Integrated Circuits (ICs), active & passive components, and Printed Circuit Boards (PCBs). In many cases, IC X-Ray Services (2D and 3D) provides the only non-destructive techniques to inspect optically hidden components and solder joints such as BGA, POP, QFN, flip chips, through holes, TSVs, micro-bumps, copper pillars, etc. There have been significant improvements in the X-ray inspection capabilities (both 2D and 3D) in the last several years.

Request a Qoute for IC X-Ray Inspection

While contrast imaging is a very powerful and widely used technique, there is significantly more information present within the X ray beam, which, until now, has not been exploited in electronics inspection. Instead of simply measuring the total absorption of the X ray beam, a physical structure known as a Multi Absorption Plate (MAP) can be placed in the beam path. This, coupled with machine learning algorithms, enables material type and thickness information to be acquired alongside the standard grey-scale image.

read-more         

SEM Failure Analysis

IC Failure Analysis Lab uses the state-of-the-art 2D and 3D X-Ray machines to meet today’s non-destructive inspection of electronic components and provide clear and high quality digital images of the samples with fast turn around and lower costs. You can request a free quote for IC X-Ray Services right now.

This technique can be used as a diagnostic tool to find voids and cracks in boards and components, and to inspect under-fill and post stress testing void and cavities.

De-lamination in FR4 boards and complex hybrid boards can also be found.

CSAM

Lab-services.com

Confocal Scanning Acoustic Microscopy (CSAM) is a rapid and reliable NDT. It uses ultrasonic waves to detect changes in acoustic impedance within the testing samples. With reflective as well as through-scan capabilities, our CSAM is able to examine various materials, different sizes and particularly on samples with interior voids or delamination.

Advancedmicroanalytical.com

Scanning Acoustic Microscopy (CSAM) is a non-invasive technique used to non-destructively inspect for construction details, defects or the integrity of an optically opaque solid sample, component, material or structure.  The Acoustic Microscope can be utilized as an aid in failure analysis, research & development, QC, reliability or process control by identifying sub surface delamination, voids, cracks, bond lines or seal issues in various materials. Typical applications are microelectronics, encapsulated devices, bonded wafers and materials, lid seal and more. At Advanced MicroAnalytical we use CSAM in concert with other techniques and instrumentation to give us diagnostic flexibility and for use with project analysis on samples where minimally invasive or nondestructive techniques are required.

Muanalysis.com

Scanning Acoustic Microscopy (SAM) is a quick, non-destructive analysis technique. SAM uses ultrasound waves to detect changes in acoustic impedances in integrated circuits (ICs) and other similar materials. Pulses of different frequencies are used to penetrate various materials to examine sample interiors for voids or delamination. MuAnalysis performs C-mode SAM (or C-SAM), with both reflective and through-scan capabilities.

Assessing package reliability often requires the ability to study package interiors without destroying the packages. Scanning Acoustic Microscopy allows the user to examine different interfaces and determine the mechanical integrity of the assembly, all by non-destructive means.

Scanning acoustic microscopy probes with ultrasound pulses at various frequencies. At interfaces between materials having different acoustic impedances, an acoustic reflection (an echo) occurs. The intensity and polarity of this echo is recorded and presented as a colour map of the sample.

MuAnalysis uses a wide range of transducer frequencies, providing the flexibility to look at various materials and sites. Low frequency transducers, such as 10, 15, 20 and 30 MHz, allow for higher penetration through materials but lower spatial resolution. Higher frequency transducers, such as 100 and 230 MHz, give higher resolution and are used once an area of concern has been isolated. Reflective microscopy looks for voiding at a certain interface. Through-scan microscopy detects voids at any depth in the device.

At MuAnalysis, on-site physical and failure analysis supports further investigation if required.

An older technique that uses Vacuum impregnation of florescent die, and then either the mechanical removal of surface mounted parts to show the incomplete contact interface, or alternatively the mechanical sectioning and inspection under UV light to show the presence of cracks and voids.

This can be used to confirm the presence of poor adhesion or cracked contacts, or voided under-fill.

Optical microscope under UV, can be followed with FEG SEM inspection and EDS mapping.

Die and pry and die and section  

italabs

Where it is impossible to resolve a problem with optical inspection the only alternative is to carry out a Dye and Pry Analysis test to confirm the presence of the defect and where it has occurred.

Dye and Pry AnalysisSometimes, continuity defects in printed circuit boards (PCBs) can be identified by optical inspection. Most times, the defect is so small, e.g., a hairline crack, that it is practically impossible to resolve using conventional inspection procedures. Without knowing the location, it is not possible to perform a microsection through the defect to characterize it.

Dye and Pry Analysis involves the immersion of a PCB into a highly penetrating dye (low viscosity).

The penetrant Dye and Pry Analysis dye percolates into all the fissures and cracks and paints all available surfaces. The sample is then dried and the two surfaces mechanically levered apart. If a crack was present, the Dye & Pry Analysis dye would have painted the pathway where the crack had propagated through.

In Ball Grid Array (BGA) joints, the Dye and Pry Analysis dye would paint the open joints where there is a discontinuity in the solder or the solder-pad interfaces, thus enabling us to see where on the BGA failure has occurred.

—–

Process-science

Sample preparation typically begins with excising the portion of the board containing the target feature. PSI uses a specialized saw blade engineered for precision cutting of circuit boards. It is crucial to use the proper equipment and technique for this initial step, as vibration or shear forces could compromise the integrity of the sample and introduce novel defects.

Next the sample is immersed into a low viscosity dye, inside a vacuum chamber. Capillary action pulls the liquid dye into every crevice and void, assisted by the pressure differential created by the vacuum. After dye immersion, the sample is baked dry in a moisture removal oven, then carefully fixtured in a puller assembly to separate the component from the board. Board and component are then examined under a microscope, where defects and anomalies are recorded and imaged

This mechanical approach can be used for the analysis of component structure, materials, soldering, under-fill, board contacts, copper wrap cracks, Copper via cracks, through PCB vias, through Silicon vias, Substrate integrity checks and Failure analysis.

It can used in combination with precision polishing, chemical staining, Dopant region etching, FIB Sectioning and FEG SEM EDS mapping to great effect.

Mechanical Cross Sectioning

A FIB cross-section tends to be of a small area due to FIB practicalities. Where a larger area needs to be examined, eg. a packaged part, then a mechanical section of the package can offer more scope. Samples are placed into a resin mold and then mechanically polished to the area of interest. The resulting polished face can be imaged in an ion beam or a FEG SEM or a section placed into the polished face – ‘a section of a section’.

The polished face may also be stained to create topography.

Dis-advantages  are that it can introduce surface damage and material smearing that can obscure native state data.

Creating a more perfect section face. This technique can be used in combination with optical Inspection, Broad Beam Ion Polishing (Perfect Edge)using Argon Ions, chemical staining or dopant etching or FIB sectioning or PLASMA FIB sectioning and SEM based EDS mapping .

Precision mechanical polishing 19.10.22

Small defects on large samples may be lost with conventional mechanical preparation methods. In such cases a more precise method can be applied to the mechanical section such as broad beam polishing.

The precision polished face can then be chemically stained for imaging, FIB sectioned (a section of a section) to obtain a profile of small defects, voids, cracks etc and may also be used for EDS elemental analysis

Broad Ion Beam Polishing of Mechanical Sections

Chalmers.se

In a Broad Ion-Beam (BIB) instrument, a beam of heavy ions, typically Ar, is used to bombard a target material, thereby sputtering atoms from the target surface. As the name of the technique implies, the milling process typically takes place over a wide area, several hundred microns up to 1-2 millimeters in diameter.

BIB instruments have been extensively used in materials research for a few decades. The major applications within CMAL have been to produce high quality TEM samples or cross sectional cuts of materials normal to the sample surface to study, e.g. interfaces and bulk matter. The former approach is often referred to as ion polishing. Since the ion polishing process is rather slow it is important that the samples are pre-thinned by e.g. mechanical grinding and polishing or chemical polishing.

This is sometimes required to remove some metal smearing artefacts that can be caused by mechanical polishing and that can obscure detail.

Chemical staining/etching of precision polished sections AM

Chemical staining (etching) of precision polished cross sections can enhance e.g. doping regions and gates and other more subtle differences in layers/structures that may be otherwise undefined using FEG SEM or FIB imaging.

This technique allows for high resolution studies of specific features identified in a mechanical section.

A specific location can be FIB sectioned thus removing all mechanical artefact and materials smearing and permitting un-compromised high quality FEG SEM inspections.

If this section is extended to provide a ‘Thick TEM section’ (200nm’s thick) it can be used for high resolution EDS maps without the expense and difficulty of having to extract the section and analyse it in a TEM (Transmission Electron Microscope)

FIB section of a mechanical section 21.10.22

While mechanical sections can assist analysis of larger samples, their preparation method can lead to smearing of the material. Where small details are needed to be examined, a FIB section of the section can be the solution allowing smaller artefacts to be sectioned and imaged with additional analysis such as EDS, TEM also possible.

pFIB allows unconventionally large structures and features to be sectioned by FIB without any mechanical artefact. Through Silicon Vias, Copper Vias cracks on boards, Copper Wrap fails etc.

This is of specific importance in the area of PCB FA because it bridges the dimension gap between mechanical preparation techniques and Focused Ion Beam (FIB) techniques.

Plasma FIB (pFIB) for large structures and PCBs 21.10.22

For sectioning large structures such as PCBs & mounted features when looking for defects, cracks, voids etc.  where traditional techniques such as FIB sections may be unsuitable. Broad Ion Beam (BIB) polishing can also be used to enhance the polished face.

SEM based EDS analysis may be done either as a point, line or 2D area.

On a bulk sample the spacial resolution may be 1 micron.

On a thinned sample the spatial resolution may be 100nm.

TEM based EDS analysis may only be performed on a thinned ‘foil’ and may be of the order of 50nm spatial resolution.

EDS 21.10.22

Sciencedirect.com

Energy Dispersive Spectroscopy

The energy dispersive spectroscopy (EDS) technique is mostly used for qualitative analysis of materials but is capable of providing semi-quantitative results as well. Typically, SEM instrumentation is equipped with an EDS system to allow for the chemical analysis of features being observed in SEM monitor. Simultaneous SEM and EDS analysis is advantageous in failure analysis cases where spot analysis becomes extremely crucial in arriving at a valid conclusion. Signals produced in an SEM/EDS system includes secondary and backscattered electrons that are used in image forming for morphological analysis as well as X-rays that are used for identification and quantification of chemicals present at detectable concentrations. The detection limit in EDS depends on sample surface conditions, smoother the surface the lower the detection limit. EDS can detect major and minor elements with concentrations higher than 10 wt% (major) and minor concentrations (concentrations between 1 and 10 wt%). The detection limit for bulk materials is 0.1 wt% therefore EDS cannot detect trace elements (concentrations below 0.01 wt%)

Thermofisher.com

Energy-dispersive X-ray spectroscopy (EDS, also abbreviated EDX or XEDS) is an analytical technique that enables the chemical characterization/elemental analysis of materials. A sample excited by an energy source (such as the electron beam of an electron microscope) dissipates some of the absorbed energy by ejecting a core-shell electron. A higher energy outer-shell electron then proceeds to fill its place, releasing the difference in energy as an X-ray that has a characteristic spectrum based on its atom of origin. This allows for the compositional analysis of a given sample volume that has been excited by the energy source. The position of the peaks in the spectrum identifies the element, whereas the intensity of the signal corresponds to the concentration of the element.

As previously stated, an electron beam provides sufficient energy to eject core-shell electrons and cause X-ray emission. Compositional information, down to the atomic level, can be obtained with the addition of an EDS detector to an electron microscope. As the electron probe is scanned across the sample, characteristic X-rays are emitted and measured; each recorded EDS spectrum is mapped to a specific position on the sample. The quality of the results depends on the signal strength and the cleanliness of the spectrum. Signal strength relies heavily on a good signal-to-noise ratio, particularly for trace element detection and dose minimization (which allows for faster recording and artifact-free results). Cleanliness will impact the number of spurious peaks seen; this is a consequence of the materials that make up the electron column.

A common failure mode for PCB’s with high fields and or high duty cycles such as those commonly found in Electric Vehicles or charging systems.

Correctly identifying a CAF fail can have a direct effect on a manufacturing quality process.

Conductive Anodic Filament Analysis (CAF) 21.10.22

Conductive Anodic Filament Analysis (CAF) is the failure – usually of PCBs – caused by the dendritic growth of conductive fibres. As these fibres may cause ‘hotspots’ EMMI/Thermal Microscopy can be used to locate the site. A plasma FIB or Broad Ion Beam (BIB) cross section of the site will permit further analysis. High resolution imaging of the dendrite could then be carried out with a FIB cross section and FEG SEM imaging and/or EDS

Dendritic growth along a surface normally in the presence of humidity can be a source of PCB failure and can have several causes – correctly identifying a SIR fail and then with FEG SEM EDS understanding the ionic components can help to identify the source of the ions.

Surface Insulation Resistance 21.10.22

Nts.com

Surface Insulation Resistance (SIR), as defined by IPC, is the electrical resistance of an insulating material between a pair of contacts, conductors, or grounding devices that is determined under specified environmental and electrical conditions.

In respect to the world of printed circuit boards (PCBs) and printed circuit assemblies (PCAs), SIR testing—also commonly referred to as Temperature Humidity Bias (THB) testing—is used to evaluate a product’s or a process’ ability to resist “failure” by means of current leakage or an electrical short (i.e., dendritic growth). SIR testing is typically performed under elevated temperature and humidity conditions—such as 85°C/85% RH and 40°C/90%—with periodic insulation resistance (IR) measurements obtained.

Icpb.com

The following is about PCB surface insulation resistance (SIR) measurement:

SIR (Surface Insulation Resistance) is usually used to test the reliability of circuit boards. The method is to interleave pairs of electrodes on a printed circuit board (PCB) to form a pattern, and then print a solder paste. ), and then continuously give a certain bias voltage (BIAS VOLTAGE) in a certain high temperature and high humidity environment, after a certain long time test (24H, 48H, 96H, 168H), and observe whether there is an instant short circuit or insulation failure between the lines Slow leakage occurs.

This test also helps to see whether the flux or other chemicals in the solder paste have any residues on the PCB surface that will affect the electrical characteristics of electronic parts. Generally, we use this method to measure static surface insulation resistance (SIR) and dynamic ion migration (ION MIGRATION). In addition, it can also be used as CAF (Conductive Anodic Filament). Fiber leakage phenomenon) test.

CSAM  am

Lab-services.com
Confocal Scanning Acoustic Microscopy (CSAM) is a rapid and reliable NDT. It uses ultrasonic waves to detect changes in acoustic impedance within the testing samples. With reflective as well as through-scan capabilities, our CSAM is able to examine various materials, different sizes and particularly on samples with interior voids or delamination.

Advancedmicroanalytical.com
Scanning Acoustic Microscopy (CSAM) is a non-invasive technique used to non-destructively inspect for construction details, defects or the integrity of an optically opaque solid sample, component, material or structure. The Acoustic Microscope can be utilized as an aid in failure analysis, research & development, QC, reliability or process control by identifying sub surface delamination, voids, cracks, bond lines or seal issues in various materials. Typical applications are microelectronics, encapsulated devices, bonded wafers and materials, lid seal and more. At Advanced MicroAnalytical we use CSAM in concert with other techniques and instrumentation to give us diagnostic flexibility and for use with project analysis on samples where minimally invasive or nondestructive techniques are required.

Muanalysis.com
Scanning Acoustic Microscopy (SAM) is a quick, non-destructive analysis technique. SAM uses ultrasound waves to detect changes in acoustic impedances in integrated circuits (ICs) and other similar materials. Pulses of different frequencies are used to penetrate various materials to examine sample interiors for voids or delamination. MuAnalysis performs C-mode SAM (or C-SAM), with both reflective and through-scan capabilities.
Assessing package reliability often requires the ability to study package interiors without destroying the packages. Scanning Acoustic Microscopy allows the user to examine different interfaces and determine the mechanical integrity of the assembly, all by non-destructive means.
Scanning acoustic microscopy probes with ultrasound pulses at various frequencies. At interfaces between materials having different acoustic impedances, an acoustic reflection (an echo) occurs. The intensity and polarity of this echo is recorded and presented as a colour map of the sample.
MuAnalysis uses a wide range of transducer frequencies, providing the flexibility to look at various materials and sites. Low frequency transducers, such as 10, 15, 20 and 30 MHz, allow for higher penetration through materials but lower spatial resolution. Higher frequency transducers, such as 100 and 230 MHz, give higher resolution and are used once an area of concern has been isolated. Reflective microscopy looks for voiding at a certain interface. Through-scan microscopy detects voids at any depth in the device.
At MuAnalysis, on-site physical and failure analysis supports further investigation if required.

                                       ————-  XRAY ——————

icfailureanalysis

X ray inspection systems are key tools for failure analysis, quality control, and yield enhancement of Integrated Circuits (ICs), active & passive components, and Printed Circuit Boards (PCBs). In many cases, IC X-Ray Services (2D and 3D) provides the only non-destructive techniques to inspect optically hidden components and solder joints such as BGA, POP, QFN, flip chips, through holes, TSVs, micro-bumps, copper pillars, etc. There have been significant improvements in the X-ray inspection capabilities (both 2D and 3D) in the last several years.

Request a Qoute for IC X-Ray Inspection

While contrast imaging is a very powerful and widely used technique, there is significantly more information present within the X ray beam, which, until now, has not been exploited in electronics inspection. Instead of simply measuring the total absorption of the X ray beam, a physical structure known as a Multi Absorption Plate (MAP) can be placed in the beam path. This, coupled with machine learning algorithms, enables material type and thickness information to be acquired alongside the standard grey-scale image.

read-more         

SEM Failure Analysis

IC Failure Analysis Lab uses the state-of-the-art 2D and 3D X-Ray machines to meet today’s non-destructive inspection of electronic components and provide clear and high quality digital images of the samples with fast turn around and lower costs. You can request a free quote for IC X-Ray Services right now.

The chemical etching of the lid of a plastic package to permit analysis and modification of the circuit within it. 48hrs advance notice required. We can offer both single and dual-acid techniques with fast turnaround and high success rates. Poly-imide can also be removed if required.

DECAP  am

Gaotecsolutions (Singapore)

Our FALIT™ (pronounced “F-A-Light”) was specifically designed with the Semiconductor Failure Analysis Lab in mind. The FALIT™ incorporates a patented laser decapsulation process with multiple laser configurations and wavelengths to provide clear and precise test samples for every type of semiconductor failure analysis application. The FALIT™ allows a faster and more accurate method for Failure Analysis semiconductor processing. Our patented semiconductor laser decapsulation ablation technology provides clean, accurate laser decapsulation, and more.

    Ideal Solution for IC Laser Decapsulation, Gel Removal, Cross-Sectioning, and Delidding Components.

    Cleanly remove mold compound using laser technology rather than the traditional unsafe Acid process.

    Expose Wire Bonds without Damage to other components.

    Air-cooled (except for the optional UV laser).

    Integrated safety shutter to avoid potential beam exposure.

    FALIT™ Laser Software interface included. Fully featured, GUI for Failure Analysis.

The FALIT™ systems provide Laser Decapsulation (ablation) and Laser Cross-sectioning of semiconductors for failure analysis labs. CLC IC laser decapsulation systems are used in many semiconductor failure analysis labs to remove mold compound, de-lid semiconductor hermetically-sealed cases, remove various gels, and cross-section ICs for further inspection. Our patented process has been refined over the 10-plus years since it’s existence.

For laser decapsulation, you will want to look at our latest technology, the Digital ICO™ laser.

This specialized laser source is the key to uncovering mold compound all the way to the die in some cases. Digital ICO™: Gets you closer. The FALIT™ can import images from a variety of test imaging process Such C-SAM, SEM, SAM and even X-RAY to show the exact location Where ablation of the EMC is required for further forensic processing.

orslabs

Acid decapsulation of electronic components is a necessary step to expose the internal construction attributes of a device for inspection and additional testing.

Decapsulation of plastic encapsulated devices requires expertise and methods suitable for removal of the component encapsulant without damaging the internal construction features that may vary by design.

Dry nitric acid is commonly used to dissolve epoxy mold compounds (EMC) leaving gold and aluminum surfaces intact. 

Specialized EMCs designed for high-temperature applications can have different epoxy matrix formulations and filler materials that may require the use of sulfuric acid instead of nitric acid or a combination of the two acids to dissolve and remove the plastic from the surface of the die and bond wires.

EMC’s thickness, particle filler density and binder formulation may require longer exposure times thereby increasing the possibility of damage, especially to non-gold bond wires i.e. aluminum, silver and copper that can be quickly degraded by acid etching.

Laser ablation decapsulation is a controlled method that can be used prior to acid etching decapsulation reducing the amount of acid and the length of time required to effectively remove EMCs.

——-

De-capsulation (Decap) is usually the 1st step to access a semiconductor device chip by etching a hole in the package over the die to expose it for visual microscope examination, FIB circuit edit, or failure analysis.  Decap is done either by chemical etching or laser ablation methods. The decap process we use has been developed…

When studying an integrated circuit, for example, the x-ray can easily reveal problems with bond wires or flip-chip bumps, often showing open-circuit or short-circuit conditions and eliminating the need to open the package at all

Optical Microscopy am

Italabs

Our Optical Microscopy Inspection suite at ITA Labs offers a combination of stereo and polarised light optical microscopy to cater for a range of magnifications. As well as being often used as a quick prelude to electron microscopy, the optical microscopes compliment the microsectioning process, enabling accurate sampling prior to encapsulation and also allowing progress to be closely monitored.

Optical Microscopy InspectionAs a technique in its own right, optical microscopy is used as the inspection tool for checking markings on silicon chip dies in electronic component counterfeiting investigations and also for the analysis and measurement of plating thickness and coating thickness in microsections.

It can also identify defects and confirm the soldering on a PCB conforms to the IPC-A-610 standard when developing a new board or implementing a new process.

lpdlabservices

Optical microscopy allows small features of a sample to be analysed in detail. LPD Lab Services routinely uses its range of microscopes for initial examination and characterisation to plan the next steps for work or to confirm customer’s observations prior to proceeding to more detailed investigations by other laboratory techniques such as SEM/EDX or reverse engineering.

The laboratory’s microscopes and experienced microscopists can acquire images in transmission or reflection with a range of lighting conditions designed to highlight the areas of interest.  High depth of field microscopes can be used to inspect the assembly of different sub-components and higher magnification microscopes can be used for polished cross-sections for example where the sample is flat.

The direct ion beam modification of a fabricated IC for the purposes of correcting faulty functionality or providing access to signal nodes for active electrical debugging.
Instructions for the changes to be made can be provided in several forms including plots, GDSII files, simple co-ordinates and a description of what you would like to have.
Most fixes can be turned around in 1 or 2 days depending on the service selected and returned to you by express courier so the working devices are on your desk the next day.
Complex or stacked faults may require more than 1 iteration to get a fully working device.
NanoScope specialises in difficult modifications on advanced processes, and particularly in the use of new techniques required to successfully work with new and challenging materials (like copper).

FIB Circuit Edit

Eag.com

Focused Ion Beam, or FIB circuit edit, services allow the customer to cut traces or add metal connections within a chip. Our services include sample preparation, sample analysis, fault isolation and actual circuit modifications. These circuit edits could support basic electrical design characterization or verification of redesign parameters. Our full range of debug tools enables you to solve even the most vexing logic failures and other anomalies.

FIB circuit edit employs a finely focused Ga+ ion beam to image, etch and deposit materials on an integrated circuit. The beam’s 4-5 nm resolution allows for extremely precise edits to be made. The FIB is coupled to a navigation system (Knights/Camelot/Lavis) providing a method to find subsurface features and ensuring that the right edits are made. The high energy Ga beam can mill through conductors and, by utilizing the appropriate gas chemistries, tungsten, platinum or silicon dioxide can be precisely deposited using the ion beam.

Focused ion beam circuit edits can be done quickly and easily, at a small fraction of the cost of a new lot of wafers in a fab. Circuit edits are often performed once a design flaw has been identified to ensure that the proposed fix will solve the complete problem. With our state-of-the-art equipment and specialized techniques, we can edit circuits at advanced process nodes such as 28 nm, 20 nm and 14 nm with multiple layer metal stacks, as well as back side editing for flip chip packages. Our electronics engineers have many years of experience throughout Silicon Valley and have the knowledge and capability necessary to accommodate the most demanding requests. FIB edits often require rapid turnaround and cannot afford mistakes – our years of experience and focus on customer satisfaction make EAG the smart choice in circuit editing.

ThermoFisher

FIB circuit edit and rapid prototyping

Time to market is a critical factor in the success of semiconductor devices. Manufacturing timelines are long and difficult to manage, so it is important that early production runs provide functional devices. Late discovery of design issues limiting device performance at final test can lead to months of delays in product introduction timelines while new mask sets are created, and new devices are manufactured.

Circuit edit systems provide a solution to test and validate design changes, optimize performance, prototype, and scale functional devices for internal and external customer’s development, validation, and qualification. Circuit edit systems utilize high-resolution focused ion beams (FIBs) and advaced chemistries to perform “nano-surgery” on semi-conductor devices, cutting and creating connections within the device to correct design issues and return functioning products. These working devices keep projects on track without the costs and delays of new mask sets

What is a Circuit Edit?

A circuit edit is when you need to modify an existing ASIC or integrated circuit for whatever reason. This is usually done with the help of an ion beam that is focused onto the chip to modify it as per the request of the designer. Engineers usually opt for this process when their chip fails to behave or operate in a manner that it is supposed to. The circuit edit can be done to either create a new connection between certain components of the circuit or remove a connection that is causing the issue such as creating shorts or simply using up too much power which is having a negative impact on the overall performance of the integrated circuit.

FIB Circuit Editing

FIB circuit editing is a process in which a focused ion beam is used to modify the logic or interconnects on a circuit wafer. FIB circuit edit is usually an extremely time consuming as well as expensive process which is why it is important to pay good attention to when you are redesigning the faulty chip that is being sent for modification through the FIB circuit edit technique.

Anysilicon.com

As mentioned before, FIB circuit edit technique can be used to cut off a faulty block on the circuit, it can be used to make new connections if one has shorted, it can be used to cut off a metal track if too much material has been deposited, and, on the contrary, it can also be used to deposit more metal material to develop a connection. The process is an extremely precise one and great care must be taken to ensure that all the details are correctly traced out onto the chip considering that most of the cuts and additions need to be made on a scale of nano and micrometers. The high energy beam can be used to cut off material as well as deposit metals such as tungsten, platinum, and silicon dioxide among others with careful precision and accuracy thanks to expert navigation systems.

With the help of FIB circuit editing, you can modify the logic of the IC, create new probe pads at various locations on the wafer, increase or decrease the total circuit resistance, as well as perform failure analysis if you are interested in figuring out what actually caused your circuit to fail and rendered it unable to perform its desired function in the first place.

When planning for a focused ion beam circuit edit, you have to make sure as a designer that you not only produce a usable chip, but also protect its integrity. It is very easy to damage the fragile integrated circuit during this process which is why it is recommended to only implement the minimum possible number of edits on a single chip so as to decrease the risk of permanent damage. You do not want to end up with an edited chip that has a completely destroyed structure at the sub micron level.

SEM, TEM or FIB imaging of samples with or without mechanical preparation (conductors/insulators). Typical resolutions by technique are :-
– up to 4nm (Ion beam) with high materials contrast imaging
– 1-2nm for SEM depending on vacuum level and kV
– ‘lattice resolution’ for TEM depending on application and material.

High Res Imaging

Blue-scientific

FEG-SEM (Field Emission Gun – Scanning Electron Microscope) provides the very highest resolution imaging compared to regular SEM. It guarantees high brightness, crisp images and stable beam current.

Usually FEG-SEMs are large floor-standing systems, but the same high resolution technology is now available in a much more convenient desktop instrument: the Thermo Scientific Phenom Pharos G2.

Very Highest Resolution

FEG gives the very highest resolution, with high brightness, crisp images and a stable beam current. The Phenom Pharos G2 offers a resolution of 2.0 nm at 20 kV. This shows the shape of nanoparticles, imperfections in coatings and other features that would be missed by other SEMs, including those with a traditional tungsten source.

Le.ac.uk

Field Emission Gun Scanning Electron Microscope (FEGSEM)

Scanning electron microscopy (SEM) is a microscopy technique in which a beam of electrons are directed at a specimen of interest. The electron beam interacts with the specimen generating a number of secondary emissions. An SEM provides the ability for high resolution surface imaging with a long depth of field images to be acquired. All our FEGSEM’s have auxiliary Energy Dispersive Spectroscopy (EDS) detectors and Electron backscatter diffraction (EBSD) cameras.

A FEGSEM is an indispensable analytical tool for research and solving industrial problems where optical microscopes will not provide the required resolution. The AMC has recently invested in two new FEGSEM’s to increase the capacity within the centre, this is in addition to the combined FIB/FEGSEM (Dualbeam) system which is also located within the centre.

Samples can be viewed coated or uncoated. Maximum sample size 150mm by 150mm.

FEG SEM

Blue-scientific

FEG-SEM (Field Emission Gun – Scanning Electron Microscope) provides the very highest resolution imaging compared to regular SEM. It guarantees high brightness, crisp images and stable beam current.

Usually FEG-SEMs are large floor-standing systems, but the same high resolution technology is now available in a much more convenient desktop instrument: the Thermo Scientific Phenom Pharos G2.

Very Highest Resolution

FEG gives the very highest resolution, with high brightness, crisp images and a stable beam current. The Phenom Pharos G2 offers a resolution of 2.0 nm at 20 kV. This shows the shape of nanoparticles, imperfections in coatings and other features that would be missed by other SEMs, including those with a traditional tungsten source.

Le.ac.uk

Field Emission Gun Scanning Electron Microscope (FEGSEM)

Scanning electron microscopy (SEM) is a microscopy technique in which a beam of electrons are directed at a specimen of interest. The electron beam interacts with the specimen generating a number of secondary emissions. An SEM provides the ability for high resolution surface imaging with a long depth of field images to be acquired. All our FEGSEM’s have auxiliary Energy Dispersive Spectroscopy (EDS) detectors and Electron backscatter diffraction (EBSD) cameras.

A FEGSEM is an indispensable analytical tool for research and solving industrial problems where optical microscopes will not provide the required resolution. The AMC has recently invested in two new FEGSEM’s to increase the capacity within the centre, this is in addition to the combined FIB/FEGSEM (Dualbeam) system which is also located within the centre.

Samples can be viewed coated or uncoated. Maximum sample size 150mm by 150mm.

SEM based EDS analysis may be done either as a point, line or 2D area. On a bulk sample the spacial resolution may be 1 micron. On a thinned sample the spatial resolution may be 100nm. TEM based EDS analysis may only be performed on a thinned ‘foil’ and may be of the order of 50nm spatial resolution.

EDS

Sciencedirect.com

Energy Dispersive Spectroscopy

The energy dispersive spectroscopy (EDS) technique is mostly used for qualitative analysis of materials but is capable of providing semi-quantitative results as well. Typically, SEM instrumentation is equipped with an EDS system to allow for the chemical analysis of features being observed in SEM monitor. Simultaneous SEM and EDS analysis is advantageous in failure analysis cases where spot analysis becomes extremely crucial in arriving at a valid conclusion. Signals produced in an SEM/EDS system includes secondary and backscattered electrons that are used in image forming for morphological analysis as well as X-rays that are used for identification and quantification of chemicals present at detectable concentrations. The detection limit in EDS depends on sample surface conditions, smoother the surface the lower the detection limit. EDS can detect major and minor elements with concentrations higher than 10 wt% (major) and minor concentrations (concentrations between 1 and 10 wt%). The detection limit for bulk materials is 0.1 wt% therefore EDS cannot detect trace elements (concentrations below 0.01 wt%)

Thermofisher.com

Energy-dispersive X-ray spectroscopy (EDS, also abbreviated EDX or XEDS) is an analytical technique that enables the chemical characterization/elemental analysis of materials. A sample excited by an energy source (such as the electron beam of an electron microscope) dissipates some of the absorbed energy by ejecting a core-shell electron. A higher energy outer-shell electron then proceeds to fill its place, releasing the difference in energy as an X-ray that has a characteristic spectrum based on its atom of origin. This allows for the compositional analysis of a given sample volume that has been excited by the energy source. The position of the peaks in the spectrum identifies the element, whereas the intensity of the signal corresponds to the concentration of the element.

As previously stated, an electron beam provides sufficient energy to eject core-shell electrons and cause X-ray emission. Compositional information, down to the atomic level, can be obtained with the addition of an EDS detector to an electron microscope. As the electron probe is scanned across the sample, characteristic X-rays are emitted and measured; each recorded EDS spectrum is mapped to a specific position on the sample. The quality of the results depends on the signal strength and the cleanliness of the spectrum. Signal strength relies heavily on a good signal-to-noise ratio, particularly for trace element detection and dose minimization (which allows for faster recording and artifact-free results). Cleanliness will impact the number of spurious peaks seen; this is a consequence of the materials that make up the electron column.

This could be a :-
– Thin film coating.
– Specific IC structure or failure.
– Particle or feature (like a grain boundary or an inclusion).
– On the surface or buried within the sample.

Cross sections can be placed with lateral accuracies as high as 100nm.

FIB X-sections (cross-sections) site specific    am

nanophysics

A Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image samples. FIB is chiefly used to create very precise place specific cross sections (below 100 nm accuracy) of a sample for subsequent imaging via SEM, STEM or TEM or to perform circuit modification. Additionally FIB can be used to image a sample directly, detecting emitted electrons. The contrast mechanism for FIB is different than for SEM or S/TEM, so for some specific examples FIB can provide unique information. A Dual Beam FIB integrates these two techniques into one tool thus enabling sample prep with FIB and SEM imaging without exchanging the sample.

For an electrical connector, it is important that the gold plating is thick enough and has good wear- resistance over its lifetime. To get a good image of such plating a Focused Ion Beam (FIB) is used. A tiny hole is milled and the resulting polished surface is analyzed using an electron microscope. In most case this electron microscope and FIB are combined in a so called DualBeam system.

FIB cross section features:

    FIB has revolutionized sample preparation for TEM samples, making it possible to identify sub-micron features and precisely prepare cross sections

    FIB-prepared sections are used extensively in SEM microscopy, where the FIB preparation, SEM imaging, and elemental analysis can happen on the same multi-technique tool.

    FIB-prepared sections are also used in Auger Electron Spectroscopy to provide elemental identification of subsurface features quickly and precisely

    It is an ideal tool for examining products with small, difficult-to-access features, such those found in the semiconductor industry and for sub-surface particle identification.

    NO mechanical stress is applied to your sample

    NO contaminants like grinding/polishing slurries are applied

    It is a good alternative for products that are difficult to mechanically polish, such as a soft polymers.

Thermofisher

Modern materials characterization is increasingly reliant on sub-surface characterization for a more comprehensive understanding of the material’s structure and physical properties. Cross-sectioning with a DualBeam instrument, which combines a focused ion beam with a scanning electron microscope (FIB-SEM), allows you to mill the material with FIB and perform high-resolution SEM imaging at nanometer scale. In failure analysis, for instance, this allows for defects to be located under the surface, making DualBeams instruments ideal for identification of the root cause of failures.

Along with high-resolution SEM imaging, cross-section characterization on the DualBeam can be expanded with back-scattered electron (BSE) imaging for maximum materials contrast, energy-dispersive X-ray spectroscopy (EDS) for compositional information, and electron backscatter diffraction (EBSD) for microstructural and crystallographic information.

Additionally, with the introduction of the Thermo Scientific Helios 5 Hydra DualBeam, we now offer the flexibility of argon, oxygen, xenon, and nitrogen ion species in one instrument, allowing you to choose the best FIB type for each of your experiments. Xenon ions are well suited for high-throughput removal of various materials, like metals and ceramics, whereas oxygen ions provide superior milling quality for carbon-based samples. In case extremely large volume characterization is needed, the Thermo Scientific Helios 5 Laser PFIB System is an additional solution. It enables high-throughput cross-sectioning up to millimeter scale, as well as processing of materials that are typically challenging for ion beams (e.g. charging or beam sensitive samples). We combine these unique DualBeam capabilities with our versatile software solutions to bring you a range of workflows for advanced 3D characterization and high-resolution analysis at the nanometer scale.

Direct measurments of 3D features and processes with traceable reference to recognised calibration standards.

FIB sections for metrology   am

nanophysics

A Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image samples. FIB is chiefly used to create very precise place specific cross sections (below 100 nm accuracy) of a sample for subsequent imaging via SEM, STEM or TEM or to perform circuit modification. Additionally FIB can be used to image a sample directly, detecting emitted electrons. The contrast mechanism for FIB is different than for SEM or S/TEM, so for some specific examples FIB can provide unique information. A Dual Beam FIB integrates these two techniques into one tool thus enabling sample prep with FIB and SEM imaging without exchanging the sample.

For an electrical connector, it is important that the gold plating is thick enough and has good wear- resistance over its lifetime. To get a good image of such plating a Focused Ion Beam (FIB) is used. A tiny hole is milled and the resulting polished surface is analyzed using an electron microscope. In most case this electron microscope and FIB are combined in a so called DualBeam system.

FIB cross section features:

    FIB has revolutionized sample preparation for TEM samples, making it possible to identify sub-micron features and precisely prepare cross sections

    FIB-prepared sections are used extensively in SEM microscopy, where the FIB preparation, SEM imaging, and elemental analysis can happen on the same multi-technique tool.

    FIB-prepared sections are also used in Auger Electron Spectroscopy to provide elemental identification of subsurface features quickly and precisely

    It is an ideal tool for examining products with small, difficult-to-access features, such those found in the semiconductor industry and for sub-surface particle identification.

    NO mechanical stress is applied to your sample

    NO contaminants like grinding/polishing slurries are applied

    It is a good alternative for products that are difficult to mechanically polish, such as a soft polymers.

Thermofisher

Modern materials characterization is increasingly reliant on sub-surface characterization for a more comprehensive understanding of the material’s structure and physical properties. Cross-sectioning with a DualBeam instrument, which combines a focused ion beam with a scanning electron microscope (FIB-SEM), allows you to mill the material with FIB and perform high-resolution SEM imaging at nanometer scale. In failure analysis, for instance, this allows for defects to be located under the surface, making DualBeams instruments ideal for identification of the root cause of failures.

Along with high-resolution SEM imaging, cross-section characterization on the DualBeam can be expanded with back-scattered electron (BSE) imaging for maximum materials contrast, energy-dispersive X-ray spectroscopy (EDS) for compositional information, and electron backscatter diffraction (EBSD) for microstructural and crystallographic information.

Additionally, with the introduction of the Thermo Scientific Helios 5 Hydra DualBeam, we now offer the flexibility of argon, oxygen, xenon, and nitrogen ion species in one instrument, allowing you to choose the best FIB type for each of your experiments. Xenon ions are well suited for high-throughput removal of various materials, like metals and ceramics, whereas oxygen ions provide superior milling quality for carbon-based samples. In case extremely large volume characterization is needed, the Thermo Scientific Helios 5 Laser PFIB System is an additional solution. It enables high-throughput cross-sectioning up to millimeter scale, as well as processing of materials that are typically challenging for ion beams (e.g. charging or beam sensitive samples). We combine these unique DualBeam capabilities with our versatile software solutions to bring you a range of workflows for advanced 3D characterization and high-resolution analysis at the nanometer scale.

EMMI

Covalentmetrology.com

Emission Microscopy (EMMI) is a non-invasive and non-destructive optical analysis technique used to localize photon emissions from fault points on integrated circuits. It is the industry-leading failure analysis technique used to isolate and analyze particular electrical failure types, such as: defective or leaky semiconductor junctions, ESD-induced damage, latch-up, and leakage current or overcurrent, among others.

+ Efficient detection and localization of integrated circuit electrical failures

+ Non-invasive and non-destructive

+ Viable for both wire bonded and flip-chip devices

– Ohmic and metallic short-circuits are not well suited for EMMI analysis

– 100% visibly obscured failure sites on the sample cannot be analyzed

Muanalysis.com

Emission microscopy (EMMI) is an efficient optical analysis technique used to detect and localize certain integrated circuit (IC) failures. Emission microscopy is non-invasive and can be performed from either the front or back of devices. Many device defects induce faint light emission in the visible and near infrared (IR) spectrum.

Emission microscopy uses a sensitive camera to view and capture these optical emissions, allowing device analysts to detect and localize certain IC defects. Since emissions can be detected from the back side, MuAnalysis uses an IR laser to create an overlay image of circuitry through the die. This allows failures to be related directly to circuit features, speeding failure resolution. A typical EMMI photo consists of an overlay of two images: the circuitry and the emission spots. Each is arbitrarily colorized a different way for clarity.

Emission microscopy is a powerful early-stage failure analysis technique. It localizes failures non-invasively and requires little in the way of sample preparation. Flip-chip devices, difficult to study by other means, are easily studied through the die without requiring decapsulation and often without thinning.

Intraspec.com

Integrated circuits can emit light when activated. Light EMission MIcroscopy (EMMI) uses this physical phenomenon to precisely localize specific areas in the silicon chip. By comparing differences in the emissions, it is possible to localize die level defects.

Sciencedirect.com (animal ecology!)

Thermal imaging is a very powerful remote sensing technique for a number of reasons, particularly when used to elucidate field studies relating to animal ecology. Thermal imaging data is collected at the speed of light in real time from a wide variety of platforms, including land, water, and air-based vehicles. It is superior to visible imaging technologies because thermal radiation can penetrate smokes, aerosols, dust, and mists more effectively than visible radiation so that animals can be detected over a wide range of normally troublesome atmospheric conditions. It is a completely passive technique capable of imaging under both daytime and night-time conditions. This minimizes disruptions and stressful disturbances to wildlife during data collection activities. It is capable of detecting animals which are colder, warmer, or the same as their background temperature because it does not compare temperatures but rather the emissivity of the animal against its background.

The site specific preparation of a TEM foil using FIB (FibXTem) with a 100nm placement accuracy through a selected feature, without mechanical sample preparation and the extraction  of the foil to a grid ready for TEM analysis (standard samples are 20×8 microns by 100nm thick)

FIBx(S)TEM section preparation    am

asu.edu

A focused ion beam (FIB) is a technique for site-specific milling and modification of a sample typically using a Gallium ions beam focussed down to a few nm.

FIB applications: Dual beam, ion beam, and SEM for milling samples; TEM sample preparation; deposition; and imaging samples.

Sample preparation encompasses all the steps necessary for the modification of a sample into a specimen suitable for SEM or TEM analysis. Our sample preparation room is designed to process samples for both the SEM (cutting, grinding and polishing) and the TEM (cutting, grinding, dimpling, wedge polishing and ion milling). In addition, we can coat the sample with gold, gold/palladium or carbon to eliminate charging in the SEM and TEM.

The imaging (inc. high resolution) and chemcial analysis of FIB produced TEM foils for any purpose. Analysis is performed in close collaboration with the customer requesting the work. We offer TEM analysis on a variety of machines, so we can match your requirments to the equipment best suited to provide the information you need.

(S)TEM Analysis

Thermofisher

A scanning transmission electron microscope (STEM) is a type of transmission electron microscope (TEM). Pronunciation is [stɛm] or [ɛsti:i:ɛm]. As with a conventional transmission electron microscope (CTEM), images are formed by electrons passing through a sufficiently thin specimen. However, unlike CTEM, in STEM the electron beam is focused to a fine spot (with the typical spot size 0.05 – 0.2 nm) which is then scanned over the sample in a raster illumination system constructed so that the sample is illuminated at each point with the beam parallel to the optical axis. The rastering of the beam across the sample makes STEM suitable for analytical techniques such as Z-contrast annular dark-field imaging, and spectroscopic mapping by energy dispersive X-ray (EDX) spectroscopy, or electron energy loss spectroscopy (EELS). These signals can be obtained simultaneously, allowing direct correlation of images and spectroscopic data.

A typical STEM is a conventional transmission electron microscope equipped with additional scanning coils, detectors, and necessary circuitry, which allows it to switch between operating as a STEM, or a CTEM; however, dedicated STEMs are also manufactured.

High-resolution scanning transmission electron microscopes require exceptionally stable room environments. In order to obtain atomic resolution images in STEM, the level of vibration, temperature fluctuations, electromagnetic waves, and acoustic waves must be limited in the room housing the microscope.^[1]

Conventional FIB TEM foils production is generally limited to within 10 microns of the sample surface. Beyond this depth it is difficult to maintain parallel sidewalls and produce foils thin enough to remain sufficiently electron transparent. NanoScope has perfected a method to producing a TEM foil from up to 30 microns depth from a sample surface. Mechanical preparation can also be used to access the correct ‘Z’ position for producing a foil.

Deep FIBx(S)TEM section preparation (>30um)

A finely focused beam of ions (FIB) can be used to prepare a foil for TEM analysis. Typically standard ultra-thin TEM foils are ~12um deep. Even with a site of interest more than 30um deep, it is still possible to make a FIB prepared TEM section. In-situ or ex-situ liftout techniques can still be applied to extract the foil, although extra care is needed!

Plunge Freezing in LN2

Cryo Sample Preparation

Thermofisher

High-quality protein preparation is the foundation of any successful structural biology technique. For cryo-electron microscopy (cryo-EM), biophysical aspects such as composition, purity, homogeneity, and stability, as well as biochemical activity strongly contribute to preparation of good quality cryo-EM grids, but they can also significantly impact the resolution of the subsequent computational reconstruction. Starting with protein expression, followed by solubilization and stabilization of the expressed protein, with subsequent purification and clean-up, Thermo Fisher Scientific offers a wide range of solutions to achieve the highest sample quality before freezing of the specimen on the EM grid.

With Gold coating

Cryo Dualbeam Microscopy

Paper abstract from Ulster Uni

With the advance of nanotechnology in biomaterials science and tissue engineering, it is essential that new techniques become available to observe processes that take place at the direct interface between tissue and scaffold materials. Here, Cryo DualBeam focused ion beam-scanning electron microscopy (FIB-SEM) was used as a novel approach to observe the interactions between frozen hydrated cells and nanometric structures in high detail. Through a comparison of images acquired with transmission electron microscopy (TEM), conventional FIB-SEM operated at ambient temperature, and Cryo DualBeam FIB-SEM, the advantages and disadvantages of each technique were evaluated. Ultrastructural details of both (extra)cellular components and cell organelles were best observe with TEM. However, processing artifacts such as shrinkage of cells at the substrate interface were introduced in both TEM and conventional FIB-SEM. In addition, the cellular contrast in conventional FIB-SEM was low; consequently, cells were difficult to distinguish from the adjoining substrate. Cryo DualBeam FIB-SEM did preserve (extra)cellular details like the contour, cell membrane, and mineralized matrix. The three described techniques have proven to be complementary for the evaluation of processes that take place at the interface between tissue and substrate.

FEG SEM  am

Blue-scientific

FEG-SEM (Field Emission Gun – Scanning Electron Microscope) provides the very highest resolution imaging compared to regular SEM. It guarantees high brightness, crisp images and stable beam current.

Usually FEG-SEMs are large floor-standing systems, but the same high resolution technology is now available in a much more convenient desktop instrument: the Thermo Scientific Phenom Pharos G2.

Very Highest Resolution

FEG gives the very highest resolution, with high brightness, crisp images and a stable beam current. The Phenom Pharos G2 offers a resolution of 2.0 nm at 20 kV. This shows the shape of nanoparticles, imperfections in coatings and other features that would be missed by other SEMs, including those with a traditional tungsten source.

Le.ac.uk

Field Emission Gun Scanning Electron Microscope (FEGSEM)

Scanning electron microscopy (SEM) is a microscopy technique in which a beam of electrons are directed at a specimen of interest. The electron beam interacts with the specimen generating a number of secondary emissions. An SEM provides the ability for high resolution surface imaging with a long depth of field images to be acquired. All our FEGSEM’s have auxiliary Energy Dispersive Spectroscopy (EDS) detectors and Electron backscatter diffraction (EBSD) cameras.

A FEGSEM is an indispensable analytical tool for research and solving industrial problems where optical microscopes will not provide the required resolution. The AMC has recently invested in two new FEGSEM’s to increase the capacity within the centre, this is in addition to the combined FIB/FEGSEM (Dualbeam) system which is also located within the centre.

Samples can be viewed coated or uncoated. Maximum sample size 150mm by 150mm.

scientific.net

Using a slice-and-view procedure in a FIB/SEM dual-beam instrument, a three-dimensional voxel dataset is produced from which morphological and distributional information on the same precipitates can be obtained yielding new insight into the particular transformation paths of these alloys, relevant for their functional behaviour.

SEM based EDS analysis may be done either as a point, line or 2D area. On a bulk sample the spacial resolution may be 1 micron. On a thinned sample the spatial resolution may be 100nm. TEM based EDS analysis may only be performed on a thinned ‘foil’ and may be of the order of 50nm spatial resolution.

EDS am

Sciencedirect.com

Energy Dispersive Spectroscopy

The energy dispersive spectroscopy (EDS) technique is mostly used for qualitative analysis of materials but is capable of providing semi-quantitative results as well. Typically, SEM instrumentation is equipped with an EDS system to allow for the chemical analysis of features being observed in SEM monitor. Simultaneous SEM and EDS analysis is advantageous in failure analysis cases where spot analysis becomes extremely crucial in arriving at a valid conclusion. Signals produced in an SEM/EDS system includes secondary and backscattered electrons that are used in image forming for morphological analysis as well as X-rays that are used for identification and quantification of chemicals present at detectable concentrations. The detection limit in EDS depends on sample surface conditions, smoother the surface the lower the detection limit. EDS can detect major and minor elements with concentrations higher than 10 wt% (major) and minor concentrations (concentrations between 1 and 10 wt%). The detection limit for bulk materials is 0.1 wt% therefore EDS cannot detect trace elements (concentrations below 0.01 wt%)

Thermofisher.com

Energy-dispersive X-ray spectroscopy (EDS, also abbreviated EDX or XEDS) is an analytical technique that enables the chemical characterization/elemental analysis of materials. A sample excited by an energy source (such as the electron beam of an electron microscope) dissipates some of the absorbed energy by ejecting a core-shell electron. A higher energy outer-shell electron then proceeds to fill its place, releasing the difference in energy as an X-ray that has a characteristic spectrum based on its atom of origin. This allows for the compositional analysis of a given sample volume that has been excited by the energy source. The position of the peaks in the spectrum identifies the element, whereas the intensity of the signal corresponds to the concentration of the element.

As previously stated, an electron beam provides sufficient energy to eject core-shell electrons and cause X-ray emission. Compositional information, down to the atomic level, can be obtained with the addition of an EDS detector to an electron microscope. As the electron probe is scanned across the sample, characteristic X-rays are emitted and measured; each recorded EDS spectrum is mapped to a specific position on the sample. The quality of the results depends on the signal strength and the cleanliness of the spectrum. Signal strength relies heavily on a good signal-to-noise ratio, particularly for trace element detection and dose minimization (which allows for faster recording and artifact-free results). Cleanliness will impact the number of spurious peaks seen; this is a consequence of the materials that make up the electron column.

Atomic Force Microscopy (AFM)    am

Nanoscience.com

Atomic Force Microscopy

The atomic force microscope (AFM) was developed to overcome a basic drawback with STM – it can only image conducting or semiconducting surfaces. The AFM has the advantage of imaging almost any type of surface, including polymers, ceramics, composites, glass, and biological samples.

Binnig, Quate, and Gerber invented the AFM in 1985. Their original AFM consisted of a diamond shard attached to a strip of gold foil. The diamond tip contacted the surface directly, with the interatomic van der Waals forces providing the interaction mechanism. Detection of the cantilever’s vertical movement was done with a second tip – an STM placed above the cantilever.

How an Atomic Force Microscope works

Analogous to how an Scanning Tunneling Microscope works, a sharp tip is raster-scanned over a surface using a feedback loop to adjust parameters needed to image a surface. Unlike Scanning Tunneling Microscopes, the Atomic Force Microscope does not need a conducting sample. Instead of using the quantum mechanical effect of tunneling, atomic forces are used to map the tip-sample interaction.

Often referred to as scanning probe microscopy (SPM), there are Atomic Force Microscopy techniques for almost any measurable force interaction – van der Waals, electrical, magnetic, thermal. For some of the more specialized techniques, modified tips and software adjustments are needed.

In addition to Angstrom-level positioning and feedback loop control, there are 2 components typically included in Atomic Force Microscopy: Deflection and Force Measurement.

lab-services.com

Description

Atomic force microscopy (AFM)  is a very high-resolution, high-sensitive type of scanning probe microscopy capable of quantifying surface roughness down to angstrom-scale. It can performs qualitative mapping of physical properties, like electric fields, adhesion layers, dopant distribution, conductivity region, Thinfilm layer etc.

• Three-dimensional surface topographic imaging
• surface roughness, grain size, step height, and pitch
• Imaging of other sample characteristics, likes magnetic field, capacitance, friction, and phase.

Measurelabs.com (Finland) has price list on site

Atomic force microscopy

Atomic force microscopy (AFM) is used to analyze surface topography of smooth surfaces. AFM can produce high resolution images and roughness analysis.

Impact-solutions.co.uk

surface analysis of plastics via atomic force microscopy

Atomic Force Microscopy (AFM) is the most powerful microscopic technique, which offer three dimensional images of the scanned material with exceptional detail and resolutions. Unlike the other microscopy techniques AFM is does not use light or electrons to see the surface, it “feels” it instead with a very fine and sharp cantilever and a mounted tip. The tip is scanning the surface in two directions and gives the profile of the scanned surface in sub-nanometer detail.

In the plastics industry, AFM is often used to investigate the phase separation between the polymer blends within the material, the dispersion of additives, particles, the crystallization rate, the friction properties, the surface roughness etc.

At impact we collaborate with Prof. Vasileios Koutsos group at the University of Edinburgh in order to use this technique for several internal and external polymer development projects.

GISMO ™ in-situ FIBxTEM lift out tool   am

Nanoscope has developed its very own in-situ lift out tool for FIBxTEM foil sections. Easily fitted to an existing FIB GAE needle, GISMO can allow extra thinning of a foil and the safe transfer of the foil to a holey grid and all with the sample inside the FIB chamber.

Plunge Freezing in LN2

Nanoscope’s own developed ‘ex-situ’ lift-out solution   am

This FIB TEM ex-situ lift out solution combines an optical microscope with extra-long working distance lenses and precision hydraulic nano-manipulation, for the routine extraction of FIBxTEM sections from bulk samples to TEM grids.

SEM based EDS analysis may be done either as a point, line or 2D area. On a bulk sample the spacial resolution may be 1 micron. On a thinned sample the spatial resolution may be 100nm. TEM based EDS analysis may only be performed on a thinned ‘foil’ and may be of the order of 50nm spatial resolution.

Plasma SEM/TEM/FIB-TEM microscope hydrocarbon cleaning tool  am

Keep your microscopes in peak operating condition.

The Downstream Asher GV10x FIB/SEM/TEM Plasma Cleaner is easy to use. It can operate (uniquely) across a broad range of vacuum levels (even high vac) making it compatible with any e-beam system from environmental W-SEM, to Aberration Corrected FEG-TEM, Surface Science tools and ebeam Lithography tools.

With Gold coating

In-situ and Ex-situTEM section lift-out training   am

TEM foil extraction can be non-trivial and any mistake can ruin several hours of sample preparation.

Developed from many years of TEM foil extraction, Nanoscope offers our own courses on the tricks and techniques in obtaining a successful TEM foil lift-out both in-situ and ex-situ.

Plunge Freezing in LN2

Patent infringement analysis   am

Counterfeit devices are an ever-present problem for device manufacturers. Devices of questionable provenance are often difficult to detect until they fail. Suspect devices can be determined if they are genuine by optical inspection of the package; decap followed by optical and (if needed) an internal FIB inspection (cross-section) of the device construction.

SEM based EDS analysis may be done either as a point, line or 2D area. On a bulk sample the spacial resolution may be 1 micron. On a thinned sample the spatial resolution may be 100nm. TEM based EDS analysis may only be performed on a thinned ‘foil’ and may be of the order of 50nm spatial resolution.

IC Process Delayering   am

IC Process Delayering is a destructive process removing each layer of a die for inspection and/or further analysis and f0r reverse engineering purposes. (icfailureanalysis)

With Gold coating

Product Tear Down – Technology Analysis   am

What is a product teardown?

It is the process of disassembling (analysing) a part to understand how its constructed.(pre-scient.com)

The analysing can be a straightforward as a surface optical or more involved with FIB cross sections (metrology) and FEG SEM high resolution imaging and EDS analysis of internal structures and materials.

There are many cases where data from a chip memory needs to be recovered or a device design needs to be duplicated (anti-obsolescence measures) – NanoScope works with partners to assist customers in these situations.

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